公开(公告)号：EP3772110A1

公开(公告)日：2021-02-03

申请号：EP20188653.8

申请日：2020-07-30

Applicant: STMicroelectronics S.r.l.

Inventor： SANTANGELO, Antonello ,  LONGO, Giuseppe ,  RENNA, Lucio

IPC: H01L29/423

Abstract: A charge-balance power device (20; 50), comprising: a semiconductor body (22; 52) having a first conductivity type (N); a trench gate (28; 58) in the semiconductor body (22; 52); a body region (25; 55), having a second conductivity (P), which extends on a first side of the trench gate (28; 58); source regions (26; 56) in the body region (25; 55); and a drain terminal (21, 24; 51, 54) opposite to the source region, as the device is a vertical-channel device. The device further comprises a first and a second columnar region having the second conductivity (P), which extend in the semiconductor body (22; 52) adjacent to mutually opposite sides of the trench gate (28; 58), at a distance (d B , d S ) from both the body region (25; 55) and from the drain terminal (21, 24; 51, 54).

公开(公告)号：EP3547375B1

公开(公告)日：2020-12-02

申请号：EP19165607.3

申请日：2019-03-27

Applicant: STMicroelectronics S.r.l.

Inventor： SANTANGELO, Antonello ,  MAZZILLO, Massimo Cataldo ,  CASCINO, Salvatore ,  LONGO, Giuseppe ,  SCIUTO, Antonella

IPC: H01L31/107