公开(公告)号：EP4177960A1

公开(公告)日：2023-05-10

申请号：EP22204133.7

申请日：2022-10-27

Applicant: STMicroelectronics S.r.l.

Inventor： CASCINO, Salvatore ,  GUARNERA, Alfio ,  SAGGIO, Mario Giuseppe

IPC: H01L29/78 ,  H01L21/336 ,  H01L29/06

Abstract: A semiconductor power device has a maximum nominal voltage and includes: a first conduction terminal (1a) and a second conduction terminal (lb); a semiconductor body (2), containing silicon carbide and having a first conductivity type; body wells (7) having a second conductivity type, housed in the semiconductor body and separated from one another by a body distance (LB); source regions housed in the body wells (7); and floating pockets (20) having the second conductivity type, formed in the semiconductor body (2) at a distance from the body wells (7) between a first face (2a) and a second face (2b) of the semiconductor body (2). The floating pockets (20) are shaped and arranged relative to the body wells (7) so that a maximum intensity of electrical field around the floating pockets (20) is greater than a maximum intensity of electrical field around the body wells (7) at least for values of an operating voltage (VDS) between the first conduction terminal (1a) and the second conduction terminal (1b) greater than a threshold voltage, the threshold voltage being less than the maximum nominal voltage.

公开(公告)号：EP3547375B1

公开(公告)日：2020-12-02

申请号：EP19165607.3

申请日：2019-03-27

Applicant: STMicroelectronics S.r.l.

Inventor： SANTANGELO, Antonello ,  MAZZILLO, Massimo Cataldo ,  CASCINO, Salvatore ,  LONGO, Giuseppe ,  SCIUTO, Antonella

IPC: H01L31/107

公开(公告)号：EP4254511A1

公开(公告)日：2023-10-04

申请号：EP23161989.1

申请日：2023-03-15

Applicant: STMicroelectronics S.r.l.

Inventor： CASCINO, Salvatore ,  GUARNERA, Alfio ,  SAGGIO, Mario Giuseppe

IPC: H01L29/78 ,  H01L29/06 ,  H01L29/423

Abstract: Electronic device comprising: a semiconductor body (8, 10) having a first electrical conductivity (N) and provided with a front side (1a); an active area (4) of the semiconductor body, accommodating the source (12) and gate (14) regions of the electronic device and configured to accommodate, in use, a conductive channel of the electronic device; and an edge region (6) of the electronic device, surrounding the active area (4) and accommodating at least in part: i) an edge termination region (20), having a second electrical conductivity (P) opposite to the first electrical conductivity (N), extending into the semiconductor body at the front side (1a); and ii) a gate connection terminal (24) of conductive material, electrically coupled to the gate region (14), extending on the front side (1a) partially superimposed on the edge termination region (20) and capacitively coupled with a portion of the semiconductor body adjacent and external to the edge termination region (20) .