Abstract:
Described herein is a reading circuit (5) for a nonvolatile memory device (1), wherein the currents flowing through an array memory cell (12) to be read, and a reference memory cell (15) with known contents, are converted into an array voltage (V M ) and, respectively, into a reference voltage (V R ), which are compared to determine the contents of the array memory cell (12). The method envisages reducing the electrical stress to which the reference memory cell (15) is subjected during reading, by generating and holding a sample (V 2 ) of the reference voltage (V R ), then deselecting the reference memory cell (15), and then continuing reading using the sample (V 2 ) of the reference voltage (V R ).
Abstract:
A self-adaptive output buffer ( 130 ) for an output terminal of an electronic circuit ( 100 ) suitable to be connected to a load ( Cload ) is proposed. The self-adaptive output buffer includes means for sensing ( 205 ) an indication of the capacitance of the load and means for driving ( 210 ) the load according to the sensing, wherein the means for sensing ( 205 ) includes capacitive means ( C S1 ) with a preset capacitance, means ( P S1 , N S1 ) for charging the capacitive means to a preset voltage, means for coupling the charged capacitive means with the load, and means for measuring ( 230 , 225 ) a measuring voltage at the capacitive means due to a charge sharing between the capacitive means ( C S1 ) and the load ( Cload ).
Abstract:
Herein described is a basic electronic circuit suitable for generating a magnitude (Iref; T). The circuit has certain structural characteristics and the magnitude undergoes variations in function of the structural characteristics of the circuit. The circuit comprises at least two circuit parts (1, 2; 100, 200) suitable for supplying respective fractions (I1, I2; T1, T2) of the magnitude (Iref; T) and the at least two circuit parts (1, 2; 100, 200) have different structural characteristics.
Abstract:
A voltage down converter (200) includes voltage regulator means (205) receiving a first voltage (Vdd) and having a regulation node for providing a regulated second voltage (Vr) lower than the first voltage, and having a control node for providing a control voltage (Vg) corresponding to the second voltage; and a voltage driver circuit branch (220) receiving the first voltage and including a variable-conductivity element (Tsb) having a control terminal coupled to the control node for controlling a current sunk by the variable-conductivity element from the first voltage; The voltage driver circuit branch has a voltage supply node (Vo), for supplying a down-converted voltage (Vo) corresponding to the second voltage, which is decoupled from the regulation node. At least one additional voltage driver circuit branch (225-1 - 225-N) is provided, receiving the first voltage and coupled to the voltage supply node, and including: a further variable-conductivity element (T-1 - T-N) having a control terminal coupled to the control node for controlling a current sunk by the further variable-conductivity element from the first voltage; and switching means (SW-1 - SW-N) for selectively enabling the further variable-conductivity element so as to keep the down-converted voltage at a prescribed value depending on the regulated second voltage.