公开(公告)号：EP1641029A1

公开(公告)日：2006-03-29

申请号：EP04425715.2

申请日：2004-09-27

Applicant: STMicroelectronics S.r.l.

Inventor： Roccaforte, Fabrizio ,  Raineri, Vito ,  La Via, Francesco ,  Saggio, Mario

IPC: H01L21/04

CPC classification number: H01L21/0435 ,  H01L21/0415

Abstract: Process for the realisation of a Schottky contact on an epitaxial layer of a semiconductor substrate (1), of the type comprising a deposition step (16) of a conductive metallic layer (18) on a surface of the epitaxial layer (32), with achievement of a interface region (20) of conductive metallic layer /semiconductor. The process further comprises a ionic irradiation step (22) directed towards the surface of the epitaxial layer (32) for forming a modified intermediate layer (26, 126) of at least one surface portion (15) of the epitaxial layer (32) for making the electric behaviour of the interface region (20) substantially dependant on the contact between the conductive metallic layer and the obtained modified intermediate layer (26, 126).

Abstract translation: 在半导体衬底（1）的外延层上实现肖特基接触的方法，其包括在外延层（32）的表面上的导电金属层（18）的沉积步骤（16）的类型，其中， 实现导电金属层/半导体的界面区域（20）。 该方法还包括指向外延层（32）的表面的离子照射步骤（22），用于形成外延层（32）的至少一个表面部分（15）的改性中间层（26,126），用于 使得界面区域（20）的电气行为基本上取决于导电金属层与所获得的改性中间层（26,126）之间的接触。