公开(公告)号：EP1225639A1

公开(公告)日：2002-07-24

申请号：EP01830031.9

申请日：2001-01-22

Applicant: STMicroelectronics S.r.l.

Inventor： Saggio, Mario ,  Lanois, Frederic ,  Frisina, Ferruccio

IPC: H01L29/872

CPC classification number: H01L29/0634 ,  H01L29/872

Abstract: The present invention relates to a Schottky barrier diode comprising a substrate region (9) of a first conductivity type formed in a semiconductor material layer (10) of same conductivity type and a metal layer (12), characterized in that at least a doped region (13) of a second conductive type is formed in said semiconductor layer (10), each one of said doped regions (13) being disposed under said material layer (10) and being separated from other doped regions (13) by portions of said semiconductor layer (10).

Abstract translation: 本发明涉及一种肖特基势垒二极管，其包括形成在具有相同导电类型的半导体材料层（10）中的第一导电类型的衬底区域（9）和金属层（12），其特征在于，至少掺杂区域 在所述半导体层（10）中形成第二导电类型（13），每个所述掺杂区域（13）设置在所述材料层（10）的下方，并且与所述第二导电类型的部分与其它掺杂区域（13）分离， 半导体层（10）。