公开(公告)号：EP1764837A1

公开(公告)日：2007-03-21

申请号：EP05108414.3

申请日：2005-09-14

Applicant: STMicroelectronics S.r.l.

Inventor： Karpov, Ilya ,  Kim, Yudong ,  Jin, Ming ,  Teegapuram, Shyam Prasad ,  Lee, Jinwook

IPC: H01L27/24

CPC classification number: H01L45/16 ,  H01L45/06 ,  H01L45/1233 ,  H01L45/126

Abstract: A phase change memory formed by a plurality of phase change memory devices having a chalcogenide memory region (28) extending over an own heater (26). The heaters (26) have all a relatively uniform height. The height uniformity is achieved by forming the heaters within pores in an insulator that includes an etch stop layer (18) and a sacrificial layer (24). The sacrificial layer is removed through an etching process such as chemical mechanical planarization. Since the etch stop layer may be formed in a repeatable way and is common across all the devices on a wafer, considerable uniformity is achieved in heater height. Heater height uniformity results in more uniformity in programmed memory characteristics.

Abstract translation: 一种相变存储器由具有硫族化物存储区域（28）的相变存储器件的形成的多个扩展到自己的加热器（26）。 加热器（26）都相对一致的高度。 高度的均匀性是通过形成加热器取得内孔在绝缘体上包括做蚀刻停止层（18）和牺牲层（24）。 如化学机械平面化：该牺牲层是通过蚀刻工艺去除。 由于蚀刻停止层可以以重复的方式形成，并且是在所有设备共同的晶片上，相当大的均匀性在加热器高度来实现的。 加热器高度均匀性导致更多的均匀性在编程的存储器特性。

公开(公告)号：EP1764837B1

公开(公告)日：2009-08-05

申请号：EP05108414.3

申请日：2005-09-14

Applicant: STMicroelectronics S.r.l.

Inventor： Karpov, Ilya ,  Kim, Yudong ,  Jin, Ming ,  Teegapuram, Shyam Prasad ,  Lee, Jinwook

IPC: H01L27/24 ,  H01L45/00

CPC classification number: H01L45/16 ,  H01L45/06 ,  H01L45/1233 ,  H01L45/126