公开(公告)号：EP1258927B1

公开(公告)日：2005-08-17

申请号：EP01830308.1

申请日：2001-05-15

Applicant: STMicroelectronics S.r.l.

Inventor： Coffa, Salvatore ,  Libertino, Sebania ,  Frisina, Ferruccio

IPC: H01L31/107 ,  H01L31/0288

CPC classification number: H01L31/107 ,  H01L31/0288 ,  Y02B10/10 ,  Y02E10/50

公开(公告)号：EP1258927A1

公开(公告)日：2002-11-20

申请号：EP01830308.1

申请日：2001-05-15

Applicant: STMicroelectronics S.r.l.

Inventor： Coffa, Salvatore ,  Libertino, Sebania ,  Frisina, Ferruccio

IPC: H01L31/107 ,  H01L31/0288

CPC classification number: H01L31/107 ,  H01L31/0288 ,  Y02B10/10 ,  Y02E10/50

Abstract: The high-gain photodetector (1) is formed in a semiconductor-material body (5) which houses a PN junction (13, 14) and a sensitive region (19) that is doped with rare earths, for example erbium (Er). The PN junction (13, 14) forms an acceleration and gain region (13, 14) separate from the sensitive region (19). The PN junction is reverse-biased and generates an extensive depletion region accommodating the sensitive region (19). Thereby, the incident photon having a frequency equal to the absorption frequency of the used rare earth crosses the PN junction (13-14), which is transparent to light, can be captured by an erbium ion in the sensitive region (19), so as to generate a primary electron, which is accelerated towards the PN junction by the electric field present, and can, in turn, generate secondary electrons by impact, according to an avalanche process. Thereby, a single photon can give rise to a cascade of electrons, thus considerably increasing detection efficiency.

Abstract translation: 高增益光电检测器（1）形成在容纳PN结（13,14）的半导体材料体（5）中，以及掺杂有稀土（例如铒）的敏感区域（19）。 PN结（13,14）形成与敏感区域（19）分离的加速度和增益区域（13,14）。 PN结被反向偏置并且产生容纳敏感区域（19）的大量耗尽区域。 因此，具有等于所使用的稀土的吸收频率的频率的入射光子穿过透明的PN结（13-14）可以被敏感区域（19）中的铒离子捕获，因此 以产生通过存在的电场朝向PN结加速的初级电子，并且可以根据雪崩过程通过冲击产生二次电子。 因此，单个光子可以产生级联的电子，从而显着提高检测效率。

公开(公告)号：EP1081812A1

公开(公告)日：2001-03-07

申请号：EP99830544.5

申请日：1999-09-02

Applicant: STMicroelectronics S.r.l. ,  CNR-IMETEM

Inventor： Coffa, Salvatore ,  Libertino, Sebania ,  Saggio, Mario ,  Frisina, Ferruccio

IPC: H01S3/16 ,  H01S5/32

CPC classification number: H01S5/305 ,  H01S3/1603 ,  H01S3/1628 ,  H01S5/3004 ,  H01S5/3068

Abstract: The invention relates to a semiconductor device for electro-optic applications of the type including at least a rare-earth ions doped P/N junction integrated on a semiconductor substrate. This device may be used to obtain laser action in Silicon and comprises a cavity or a waveguide and a coherent light source obtained incorporating the rare-earth ions, and specifically Erbium ions, in the depletion layer of said P/N junction.
The junction may be for instance the base-collector region of a bipolar transistor and is reverse biased.

Abstract translation: 本发明涉及一种用于电光应用的半导体器件，其包括至少掺杂在半导体衬底上的稀土离子掺杂的P / N结。 该装置可以用于在硅中获得激光作用，并且包括在所述P / N结的耗尽层中获得的掺杂有稀土离子，特别是铒离子的空腔或波导和相干光源。 结可以是例如双极晶体管的基极 - 集电极区域并且被反向偏置。