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1.发明授权Process for the accomplishment of an ROM memory cell having a low drain capacity and a corresponding ROM memory cell 失效一种用于制造具有低漏电容的ROM存储器单元的方法，以及相应的ROM存储器单元
公开(公告)号：EP0451883B1
公开(公告)日：2002-12-18
申请号：EP91200496.7
申请日：1991-03-07
Applicant: STMicroelectronics S.r.l.
Inventor： Cappelletti, Paolo , Vajana, Bruno , Lucherini, Silvia
IPC: H01L27/112 , H01L21/8246
CPC classification number: H01L27/11253 , H01L27/112 , H01L27/1126 , H01L27/11266
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