公开(公告)号：EP1775731A1

公开(公告)日：2007-04-18

申请号：EP05425718.3

申请日：2005-10-13

Applicant: STMicroelectronics S.r.l.

Inventor： Malhi, Vijay Kumar ,  Mondello, Antonino

IPC: G11C16/10

CPC classification number: G11C16/102 ,  G11C16/105 ,  H03K21/403

Abstract: The present invention describes a non-volatile memory device comprising a matrix of non-volatile memory cells (1), a writing circuitry (2) and a reading circuitry (3) for said memory cells of the matrix. The device comprises a counter comprising a sector (11) of non-volatile memory cells and logic means (5) capable of scanning the memory cells of said sector (11) by means of said reading circuitry and of updating said sector (11) by commanding the writing of a given value in a memory cell different from the memory cell containing said given value by means of said writing circuitry (2).

Abstract translation: 本发明描述了一种非易失性存储器件，其包括用于矩阵的所述存储器单元的非易失性存储器单元（1），写入电路（2）和读取电路（3）的矩阵。 该装置包括一个计数器，该计数器包括非易失性存储器单元的扇区（11）和能够通过所述读取电路扫描所述扇区（11）的存储单元的逻辑装置（5），并且通过 通过所述写入电路（2）命令在与包含所述给定值的存储单元不同的存储单元中写入给定值。

公开(公告)号：EP1775731B1

公开(公告)日：2009-12-02

申请号：EP05425718.3

申请日：2005-10-13

Applicant: STMicroelectronics S.r.l.

Inventor： Malhi, Vijay Kumar ,  Mondello, Antonino

IPC: G11C16/10

CPC classification number: G11C16/102 ,  G11C16/105 ,  H03K21/403