公开(公告)号：EP0878833A3

公开(公告)日：1999-02-17

申请号：EP98830235.2

申请日：1998-04-20

Applicant: STMicroelectronics S.r.l.

Inventor： Moroni, Maurizio ,  Clementi, Cesare

IPC: H01L21/285

CPC classification number: H01L29/6659 ,  H01L21/823814 ,  H01L29/665 ,  H01L29/6656 ,  H01L29/66659

Abstract: Process for forming salicide on active areas of MOS transistors (10,11), each comprising a gate (2) and respective source and drain regions (5,12;7,13;5A,5B), the source and drain regions comprising each a first lightly doped sub-region (5;7;5A) adjacent the gate (2) and a second highly doped sub-region (12;13;5B) spaced apart from the gate (2), characterized in that the salicide is formed selectively at least over the second highly doped sub-regions (12;13;58) of the source and drain regions of the MOS transistors, and not over the first lightly doped sub-region (5;7;5A).

公开(公告)号：EP0878833A2

公开(公告)日：1998-11-18

申请号：EP98830235.2

申请日：1998-04-20

Applicant: STMicroelectronics S.r.l.

Inventor： Moroni, Maurizio ,  Clementi, Cesare

IPC: H01L21/285

CPC classification number: H01L29/6659 ,  H01L21/823814 ,  H01L29/665 ,  H01L29/6656 ,  H01L29/66659

Abstract: Process for forming salicide on active areas of MOS transistors (10,11), each comprising a gate (2) and respective source and drain regions (5,12;7,13;5A,5B), the source and drain regions comprising each a first lightly doped sub-region (5;7;5A) adjacent the gate (2) and a second highly doped sub-region (12;13;5B) spaced apart from the gate (2), characterized in that the salicide is formed selectively at least over the second highly doped sub-regions (12;13;58) of the source and drain regions of the MOS transistors, and not over the first lightly doped sub-region (5;7;5A).

Abstract translation: 过程用于在MOS晶体管的有源区（10,11）形成自对准硅化物，每一个都包括一个栅极（2）和相应的源区和漏区（5.12; 7.13; 5A，5B），源区和漏区每一个都包括 第一轻掺杂的子区域（5; 7; 5A）相邻的门（2）和第二高掺杂子区域（12; 13; 5B）从栅极隔开（2），dadurch gekennzeichnet，DASS死自对准硅化物是 选择地形成至少在第二高掺杂的子区域（12; 13; 58）的MOS晶体管的源和漏区，而不是在所述第一轻掺杂的子区域（5,7，图5A）。