公开(公告)号：EP0889505B1

公开(公告)日：2005-06-08

申请号：EP97830335.2

申请日：1997-07-03

Applicant: STMicroelectronics S.r.l.

Inventor： Queirolo, Giuseppe ,  Ottaviani, Giampiero ,  Cerofolini, Gianfranco

IPC: H01L21/306

CPC classification number: H01L21/306 ,  H01L21/3043

公开(公告)号：EP0889505A1

公开(公告)日：1999-01-07

申请号：EP97830335.2

申请日：1997-07-03

Applicant: STMicroelectronics S.r.l.

Inventor： Queirolo, Giuseppe ,  Ottaviani, Giampiero ,  Cerofolini, Gianfranco

IPC: H01L21/306

CPC classification number: H01L21/306 ,  H01L21/3043

Abstract: A process for cutting a trench in a silicon monocrystal in areas defined by a mask comprises forming a mask that defines the etch area on the surface of a monocrystallin silicon wafer eventually covered by a thin layer of oxide; implanting ions with a kinetic energy and in a dose sufficient to amorphize the silicon down to a predefined depth within the defined area, while maintaining the temperature of the wafer sufficiently low to prevent relaxation of point defects produced in the silicon and diffusion of the implanted ions in the crystal lattice of the silicon adjacent to the amorphized region; and heating the implanted wafer causing dislodgment and expulsion of the amorphized portion in correspondence of the interface with the adjacent crystal lattice of the silicon.

Abstract translation: 在由掩模限定的区域中切割硅单晶中的沟槽的工艺包括形成掩模，其限定最终被薄层氧化物覆盖的单晶硅晶片的表面上的蚀刻区域; 以足够的动能注入离子并使剂量足以将硅非晶硅降低到限定区域内的预定深度，同时保持晶片的温度足够低以防止在硅中产生的点缺陷的弛豫和注入离子的扩散 在与非晶化区相邻的硅的晶格中; 并且加热植入的晶片，导致对应于与硅的相邻晶格的界面的非晶化部分的移动和排出。