Abstract:
Phase-change memory cell (61), formed by a phase-change memory element (64) and by a selection element (65), which is formed in a semiconductor material body (20) and is connected to the phase-change memory element (64). The phase-change memory element (64) is made up of a chalcogenic material layer (17) and a heater (63). The selection element (65) is in direct contact with the heater (63) and extends through a dielectric region (38,24) arranged on top of and contiguous to the semiconductor material body (20). A dielectric material layer (32) is arranged on the dielectric region (24) and houses a portion of the chalcogenic material layer (17).