公开(公告)号：EP1845567A1

公开(公告)日：2007-10-17

申请号：EP06425257.0

申请日：2006-04-11

Applicant: STMicroelectronics S.r.l.

Inventor： Pellizzer, Fabio ,  Ottogalli, Federica

IPC: H01L45/00 ,  H01L27/24

CPC classification number: H01L27/2436 ,  H01L27/2445 ,  H01L45/06 ,  H01L45/1233 ,  H01L45/126 ,  H01L45/144 ,  H01L45/1675

Abstract: Phase-change memory cell (61), formed by a phase-change memory element (64) and by a selection element (65), which is formed in a semiconductor material body (20) and is connected to the phase-change memory element (64). The phase-change memory element (64) is made up of a chalcogenic material layer (17) and a heater (63). The selection element (65) is in direct contact with the heater (63) and extends through a dielectric region (38,24) arranged on top of and contiguous to the semiconductor material body (20). A dielectric material layer (32) is arranged on the dielectric region (24) and houses a portion of the chalcogenic material layer (17).

Abstract translation: 由相变存储元件（64）和选择元件（65）形成的相变存储单元（61），其形成在半导体材料体（20）中，并连接到相变存储元件 （64）。 相变存储元件（64）由硫属材料层（17）和加热器（63）构成。 选择元件（65）与加热器（63）直接接触并且延伸穿过布置在半导体材料体（20）顶部并邻近半导体材料体（20）的电介质区域（38,24）。 介电材料层（32）布置在电介质区域（24）上并容纳一部分硫属材料层（17）。