Phase-change memory device and manufacturing process thereof.
    1.
    发明公开
    Phase-change memory device and manufacturing process thereof. 审中-公开
    Phasenwechselspeicherelement und Herstellungsprozessdafür

    公开(公告)号:EP1845567A1

    公开(公告)日:2007-10-17

    申请号:EP06425257.0

    申请日:2006-04-11

    Abstract: Phase-change memory cell (61), formed by a phase-change memory element (64) and by a selection element (65), which is formed in a semiconductor material body (20) and is connected to the phase-change memory element (64). The phase-change memory element (64) is made up of a chalcogenic material layer (17) and a heater (63). The selection element (65) is in direct contact with the heater (63) and extends through a dielectric region (38,24) arranged on top of and contiguous to the semiconductor material body (20). A dielectric material layer (32) is arranged on the dielectric region (24) and houses a portion of the chalcogenic material layer (17).

    Abstract translation: 由相变存储元件(64)和选择元件(65)形成的相变存储单元(61),其形成在半导体材料体(20)中,并连接到相变存储元件 (64)。 相变存储元件(64)由硫属材料层(17)和加热器(63)构成。 选择元件(65)与加热器(63)直接接触并且延伸穿过布置在半导体材料体(20)顶部并邻近半导体材料体(20)的电介质区域(38,24)。 介电材料层(32)布置在电介质区域(24)上并容纳一部分硫属材料层(17)。

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