公开(公告)号：EP0987747A1

公开(公告)日：2000-03-22

申请号：EP98830540.5

申请日：1998-09-17

Applicant: STMicroelectronics S.r.l.

Inventor： Crema, Paolo ,  Passagrilli, Carlo Alberto

IPC: H01L21/48

CPC classification number: H01L21/4821 ,  H01L2224/32245 ,  H01L2224/45144 ,  H01L2224/48091 ,  H01L2224/48247 ,  H01L2224/49171 ,  H01L2224/73265 ,  H01L2924/00014 ,  H01L2924/00

Abstract: The process comprises the following operations: forming a structure of metal elements with functions of support and electrical connection, these metal elements having a high degree of surface finish; fixing a chip of semiconductor material, containing active parts and contact pads, to an area of a metal element of the structure acting as a support; electrically connecting the contact pads of the chip to predetermined metal elements of the structure acting as terminal conductors; and incorporating in plastic the chip of semiconductor material and part of the structure of metal elements. To improve the adhesion between the structure and the plastic, at least part (32) of the surface of the metal elements is roughened by irradiation with a laser light beam.

Abstract translation: 该方法包括以下操作：形成具有的支持和电连接，具有高程度的表面光洁度的论文金属元素的功能的金属元素的一个结构; 固定半导体材料的芯片中，在用作支撑结构的金属元素的区域含有活性部分和接触垫，以; 芯片的接触垫电连接到所述结构充当端子导体的预定的金属元素; 并在塑料掺入半导体材料和金属元素的结构的一部分的芯片。 为了改善金属元素的表面的结构和塑料，至少部分（32）之间的粘合力是通过照射激光光束粗糙化。