公开(公告)号：EP1310993A3

公开(公告)日：2003-07-16

申请号：EP02024185.7

申请日：2002-10-30

Applicant: STMicroelectronics S.r.l.

Inventor： Frisina, Ferruccio ,  Magri', Angelo ,  Pinto, Antonio

IPC: H01L21/60 ,  H01L23/485 ,  H01L29/417

CPC classification number: H01L24/10 ,  H01L23/485 ,  H01L23/49562 ,  H01L24/13 ,  H01L24/37 ,  H01L24/40 ,  H01L24/48 ,  H01L24/73 ,  H01L29/41741 ,  H01L2224/13 ,  H01L2224/13099 ,  H01L2224/48247 ,  H01L2224/73221 ,  H01L2224/84801 ,  H01L2924/00014 ,  H01L2924/00015 ,  H01L2924/01004 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01022 ,  H01L2924/01027 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01074 ,  H01L2924/01079 ,  H01L2924/014 ,  H01L2924/14 ,  H01L2924/181 ,  H01L2924/351 ,  H01L2924/00 ,  H01L2224/45099 ,  H01L2224/05599 ,  H01L2224/85399 ,  H01L2924/00012 ,  H01L2224/45015 ,  H01L2924/207 ,  H01L2224/37099

Abstract: The invention relates to an electronic power device (1) of improved structure and fabricated with MOS technology to have at least one gate finger region (3) and corresponding source regions (4) on opposite sides of the gate region (3). This device (1) has at least one first-level metal layer (3',4') arranged to independently contact the gate region (3) and source regions, and has a protective passivation layer (5) arranged to cover the gate region (3). Advantageously, a wettable metal layer (7), deposited onto the passivation layer (5) and the first-level metal layer (4'), overlies said source regions (4). In this way, the additional wettable metal layer (7) is made to act as a second-level metal.

公开(公告)号：EP1310993A2

公开(公告)日：2003-05-14

申请号：EP02024185.7

申请日：2002-10-30

Applicant: STMicroelectronics S.r.l.

Inventor： Frisina, Ferruccio ,  Magri', Angelo ,  Pinto, Antonio

IPC: H01L21/60 ,  H01L23/485

CPC classification number: H01L24/10 ,  H01L23/485 ,  H01L23/49562 ,  H01L24/13 ,  H01L24/37 ,  H01L24/40 ,  H01L24/48 ,  H01L24/73 ,  H01L29/41741 ,  H01L2224/13 ,  H01L2224/13099 ,  H01L2224/48247 ,  H01L2224/73221 ,  H01L2224/84801 ,  H01L2924/00014 ,  H01L2924/00015 ,  H01L2924/01004 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01022 ,  H01L2924/01027 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01074 ,  H01L2924/01079 ,  H01L2924/014 ,  H01L2924/14 ,  H01L2924/181 ,  H01L2924/351 ,  H01L2924/00 ,  H01L2224/45099 ,  H01L2224/05599 ,  H01L2224/85399 ,  H01L2924/00012 ,  H01L2224/45015 ,  H01L2924/207 ,  H01L2224/37099

Abstract: The invention relates to an electronic power device (1) of improved structure and fabricated with MOS technology to have at least one gate finger region (3) and corresponding source regions (4) on opposite sides of the gate region (3). This device (1) has at least one first-level metal layer (3',4') arranged to independently contact the gate region (3) and source regions, and has a protective passivation layer (5) arranged to cover the gate region (3). Advantageously, a wettable metal layer (7), deposited onto the passivation layer (5) and the first-level metal layer (4'), overlies said source regions (4). In this way, the additional wettable metal layer (7) is made to act as a second-level metal.

Abstract translation: 本发明涉及一种在改进的结构（1）的功率电子装置和MOS技术制造成具有至少一个栅极指区域（3）和相应的源极区（4）在所述栅极区的相对侧（3）。 （1）具有至少一个第一级金属层（3”，4' ）设置在该装置unabhängig接触栅极区域（3）和源极区，以及具有布置以覆盖所述栅极区的保护钝化层（5） （3）。 有利的是，沉积在钝化层（5）和所述第一级金属层（4“）的可湿性金属层（7）覆盖所述源极区域（4）。 以这种方式，附加的润湿性的金属层（7）由以作为第二级金属。