公开(公告)号：EP1426968A2

公开(公告)日：2004-06-09

申请号：EP03104384.7

申请日：2003-11-26

Applicant: STMicroelectronics S.r.l.

Inventor： MICHELONI, Rino ,  RAVASIO, Roberto

IPC: G11C11/56

CPC classification number: G11C16/10 ,  G11C11/5628 ,  G11C16/3454

Abstract: A method of programming an electrically programmable memory comprises applying at least one first programming pulse to a group of memory cells ( MC1-MCk ) of the memory, accessing the memory cells of the group to ascertain a programming state thereof, and applying at least one second programming pulse to those memory cells in the group whose programming state is not ascertained to correspond to a desired programming state. A voltage applied to a control electrode of the memory cells is varied between the at least one first programming pulse and the at least one second programming pulse according to a forecasted change in biasing conditions of the memory cells in the group between said at least one first and at least one second programming pulses. Undesired over-programming of the memory cells is thus avoided.

Abstract translation: 一种编程电可编程存储器的方法包括将至少一个第一编程脉冲施加到存储器的一组存储器单元（MC1-MCK），访问该组的存储器单元以确定其编程状态，以及应用至少一个 第二编程脉冲到编程状态未被确定以对应于期望的编程状态的组中的那些存储器单元。 根据在所述至少一个第一编程脉冲之间的所述组中的存储器单元的偏置条件的预测变化，在所述至少一个第一编程脉冲和所述至少一个第二编程脉冲之间改变施加到所述存储器单元的控制电极的电压 和至少一个第二编程脉冲。 因此避免了对存储器单元的不期望​​的过度编程。

公开(公告)号：EP1426968A3

公开(公告)日：2007-06-20

申请号：EP03104384.7

申请日：2003-11-26

Applicant: STMicroelectronics S.r.l.

Inventor： MICHELONI, Rino ,  RAVASIO, Roberto

IPC: G11C11/56 ,  G11C16/10

CPC classification number: G11C16/10 ,  G11C11/5628 ,  G11C16/3454

Abstract: A method of programming an electrically programmable memory comprises applying at least one first programming pulse to a group of memory cells ( MC1-MCk ) of the memory, accessing the memory cells of the group to ascertain a programming state thereof, and applying at least one second programming pulse to those memory cells in the group whose programming state is not ascertained to correspond to a desired programming state. A voltage applied to a control electrode of the memory cells is varied between the at least one first programming pulse and the at least one second programming pulse according to a forecasted change in biasing conditions of the memory cells in the group between said at least one first and at least one second programming pulses. Undesired over-programming of the memory cells is thus avoided.

Abstract translation: 一种对电可编程存储器进行编程的方法包括将至少一个第一编程脉冲施加到存储器的一组存储器单元（MC1-MCk），访问该组的存储器单元以确定其编程状态，并且将至少一个 第二编程脉冲到编程状态未被确定为对应于期望的编程状态的组中的那些存储器单元。 施加到存储器单元的控制电极的电压在至少一个第一编程脉冲和至少一个第二编程脉冲之间根据组中的存储器单元的偏置条件的预测变化在所述至少一个第一编程脉冲 和至少一个第二编程脉冲。 因此避免了对存储单元的不希望的过度编程。