公开(公告)号：EP3944309A1

公开(公告)日：2022-01-26

申请号：EP21184890.8

申请日：2021-07-09

Applicant: STMicroelectronics S.r.l.

Inventor： STELLA, Cristiano Gianluca ,  RUSSO, Fabio

IPC: H01L23/485 ,  H01L23/492 ,  H01L23/495 ,  H01L23/373 ,  H01L23/433

Abstract: The HV MOSFET device has a body (35) integrating source conductive regions (37); projecting gate structures (46) above the body, laterally offset with respect to the source conductive regions (37); source contact regions (45), of a first metal, arranged on the body in electric contact with the source conductive regions (37); and source connection regions (48), of a second metal, arranged above the source contact regions (45) and having a height protruding with respect to the projecting gate structures (46). A package (59) includes a metal support (55) bonded to a second surface (35A) of the body; a dissipating region ,(32,57,72,73), above the first surface (35B) of the semiconductor die (31) and comprising a conductive plate (57) having a planar face (57A) bonded to the source connection regions (48) and spaced from the projecting gate structures; and a package mass (59) of dielectric material, between the support (55) and the dissipating region (32) and incorporating the semiconductor die (31). The dissipating region (32,57,72,73) is a DBC-type insulation multilayer (71) comprising the conductive plate (57), an intermediate insulating region (72), coupled to the conductive plate (57), and a top conductive region (73), coupled to the intermediate insulating region (72).