公开(公告)号：EP2509106A1

公开(公告)日：2012-10-10

申请号：EP12163423.2

申请日：2012-04-05

Applicant: STMicroelectronics S.r.l.

Inventor： Renna, Marco ,  Scuderi, Antonino ,  Magro, Carlo ,  Spina, Nunzio ,  Ragonese, Egidio ,  Marano, Barbaro ,  Palmisano, Giuseppe

IPC: H01L25/065 ,  H01L23/48

CPC classification number: H01L25/0657 ,  H01L21/76898 ,  H01L23/48 ,  H01L23/481 ,  H01L24/48 ,  H01L24/49 ,  H01L2224/48091 ,  H01L2224/48137 ,  H01L2224/49175 ,  H01L2225/06513 ,  H01L2225/06531 ,  H01L2225/06541 ,  H01L2924/00014 ,  H01L2924/1305 ,  H01L2924/13091 ,  H01L2924/181 ,  H01L2924/30107 ,  H01L2924/00 ,  H01L2924/00012 ,  H01L2224/45099 ,  H01L2224/45015 ,  H01L2924/207

Abstract: A galvanic-isolated coupling of circuit portions is accomplished on the basis of a stacked chip configuration. The semiconductor chips (200A,200B) thus can be fabricated on the basis of any appropriate process technology, thereby incorporating one or more coupling elements (220A,220B), such as primary or secondary coils of a micro transformer, wherein the final characteristics of the micro transformer are adjusted during the wafer bond process.

Abstract translation: 电路部分的电隔离的耦合是一个堆叠晶片组构的基础上完成的。 半导体芯片（200A，200B），从而可以在任何适当的工艺技术的基础上制造，由此将一个或多个耦合元件（220A，220B）：诸如微变压器的初级或次级线圈，worin的最终特性 微变压器的过程中在晶片接合工艺调整。