公开(公告)号：EP1045434A1

公开(公告)日：2000-10-18

申请号：EP99830216.0

申请日：1999-04-15

Applicant: STMicroelectronics S.r.l.

Inventor： Caruso, Davide ,  Ranieri, Vito ,  Saggio, Mario ,  Stagnitti, Umberto

IPC: H01L21/322 ,  H01L21/265

CPC classification number: H01L21/26506 ,  H01L21/3223 ,  H01L21/3226

Abstract: This invention relates to a method for manufacturing electronic devices integrated monolithically in a semiconductor substrate delimited by two opposed front (3) and back (4) surfaces of a semiconductor material wafer (2). The method comprises at least a step of implanting ions of a noble gas, followed by a thermal treatment directed to form gettering microvoids in the semiconductor by evaporation of the gas. The ion implanting step is carried out through the back surface (4) of the semiconductor wafer (2) prior to starting the manufacturing process for the electronic devices, essentially before the step of cleaning the front surface (3) of the wafer (2).

Abstract translation: 本发明涉及一种用于制造电子器件的方法在由两个相对的前（3）和背面限定的半导体基板单片集成（4）的半导体材料晶片（2）的表面上。 该方法至少包括注入惰性气体的离子的步骤，随后通过定向以形成由所述气体的蒸发在半导体吸除微孔热处理。 离子注入步骤是通过背表面上进行（4）的半导体晶片（2）之前，开始制造过程的电子装置，清洗晶片的前表面（3）的步骤之前，从本质上（2） ，