公开(公告)号：EP1426967A3

公开(公告)日：2007-06-20

申请号：EP03104383.9

申请日：2003-11-26

Applicant: STMicroelectronics S.r.l.

Inventor： Micheloni, Rino ,  Ravasto, Roberto ,  Scommegna, Salvatrice

IPC: G11C11/56 ,  G11C16/10 ,  G11C16/34

CPC classification number: G11C16/3459 ,  G11C11/5628 ,  G11C16/3454 ,  G11C2211/5621

Abstract: A method of programming an electrically programmable memory comprises: accessing a group of memory cells ( MC1-MCk ) of the memory to ascertain a programming state thereof ( 401,407;503,509a,513a ); applying a programming pulse to those memory cells in the group whose programming state is not ascertained to correspond to a desired programming state ( 405;507a,509c,513c ); and repeating said acts of accessing and applying for the memory cells in the group whose programming state is not ascertained ( 411;509b,513b ). After the programming state of a prescribed number of memory cells in the group has been ascertained, the memory cells in the group are accessed again and the programming state of the memory cells whose programming state was previously ascertained is re-ascertained ( 413,415;515 ); at least one additional programming pulse is applied to those memory cells in the group whose programming state is not re-ascertained ( 405;507a,509c,513c ). The method guarantees that the programming state of the memory cells is ascertained in conditions that closely resembles, or are substantially identical, to the conditions in which the memory cells will be accessed in a standard read.

公开(公告)号：EP1426967A2

公开(公告)日：2004-06-09

申请号：EP03104383.9

申请日：2003-11-26

Applicant: STMicroelectronics S.r.l.

Inventor： Micheloni, Rino ,  Ravasto, Roberto ,  Scommegna, Salvatrice

IPC: G11C11/56

CPC classification number: G11C16/3459 ,  G11C11/5628 ,  G11C16/3454 ,  G11C2211/5621

Abstract: A method of programming an electrically programmable memory comprises: accessing a group of memory cells ( MC1-MCk ) of the memory to ascertain a programming state thereof ( 401,407;503,509a,513a ); applying a programming pulse to those memory cells in the group whose programming state is not ascertained to correspond to a desired programming state ( 405;507a,509c,513c ); and repeating said acts of accessing and applying for the memory cells in the group whose programming state is not ascertained ( 411;509b,513b ). After the programming state of a prescribed number of memory cells in the group has been ascertained, the memory cells in the group are accessed again and the programming state of the memory cells whose programming state was previously ascertained is re-ascertained ( 413,415;515 ); at least one additional programming pulse is applied to those memory cells in the group whose programming state is not re-ascertained ( 405;507a,509c,513c ). The method guarantees that the programming state of the memory cells is ascertained in conditions that closely resembles, or are substantially identical, to the conditions in which the memory cells will be accessed in a standard read.

Abstract translation: 一种对电可编程存储器进行编程的方法包括：访问存储器的一组存储单元（MC1-MCk）以确定其编程状态（401,407; 503,509a，513a）; 将编程脉冲施加到其编程状态未被确定为对应于期望的编程状态（405; 507a，509c，513c）的组中的那些存储器单元; 并且重复所述访问和应用编程状态未被确定的组中的存储器单元的行为（411; 509b，513b）。 在确定了该组中规定数量的存储单元的编程状态之后，再次访问该组中的存储单元，并重新确定编程状态先前确定的存储单元的编程状态（413,415; 515） ; 至少一个附加编程脉冲被施加到其编程状态未被重新确定的组中的那些存储器单元（405; 507a，509c，513c）。 该方法保证了在与标准读取中存储单元将被访问的条件非常相似或基本相同的条件下确定存储单元的编程状态。