公开(公告)号：EP0908895A1

公开(公告)日：1999-04-14

申请号：EP97830504.3

申请日：1997-10-09

Applicant: STMicroelectronics S.r.l.

Inventor： Cappelletti, Paolo ,  Ricco', Bruno ,  Esseni, David

IPC: G11C16/00 ,  G11C16/06

CPC classification number: G11C16/10 ,  G11C11/5621 ,  G11C11/5628 ,  G11C16/12

Abstract: In order to optimise writing of the cell, the latter is written in a condition of equilibrium between the injection current ( I g ) and the displacement current ( C pp V sl ). In this way, during writing, the voltage of the floating gate region ( V fl ) remains constant, as does the drain current and the rise in the threshold voltage. In particular, both for programming and for soft-writing after erasure, the substrate of the cell is biased at a negative voltage ( V sb ) with respect to the source region, and the control gate region of the cell receives a ramp voltage ( V cg ) with a selected predetermined inclination ( V sl ) satisfying an equilibrium condition ( V sl I g,sat /C pp ).

Abstract translation: 为了优化电池的写入，后者写入注入电流（Ig）和位移电流（CppVsl）之间的平衡状态。 以这种方式，在写入期间，浮动栅极区域（Vfl）的电压保持恒定，漏极电流和阈值电压的上升也保持恒定。 特别地，对于擦除后的编程和软写入，单元的基板相对于源极区域被偏压为负电压（Vsb），并且单元的控制栅极区域接收斜坡电压（Vcg） 具有满足平衡条件（Vs1