公开(公告)号：EP1742272A1

公开(公告)日：2007-01-10

申请号：EP05425492.5

申请日：2005-07-08

Applicant: STMicroelectronics S.r.l.

Inventor： Ronsisvalle, Cesare ,  Enea, Vincenzo

IPC: H01L29/78 ,  H01L27/07

CPC classification number: H01L29/7803 ,  H01L27/0259 ,  H01L27/0716 ,  H01L29/7302 ,  H01L29/739 ,  H01L29/7808 ,  H01L29/866

Abstract: A power actuator (20) of the emitter-switched type is described, the power actuator comprising at least one high voltage bipolar transistor (2) and a low voltage DMOS transistor (3) connected in cascode configuration between a collector terminal (C) of the bipolar transistor (2) and a source terminal (S) of the DMOS transistor (3) and having respective control terminals (B,G).
Advantageously according to the invention, the power actuator (20) further comprises at least a Zener diode (21), inserted between the source terminal (S) of the DMOS transistor (3) and the control terminal (B) of the bipolar transistor (2).

Abstract translation: 描述了发射极开关型的电源致动器（20），功率致动器包括至少一个高压双极晶体管（2）和低电压DMOS晶体管（3），其以共源共享结构连接在集电极端子（C）之间 双极晶体管（2）和DMOS晶体管（3）的源极端子（S）并具有各自的控制端子（B，G）。 有利地，根据本发明，功率致动器（20）还包括至少一个齐纳二极管（21），其插入在DMOS晶体管（3）的源极端子（S）和双极晶体管（3）的控制端子 2）。

公开(公告)号：EP1443649B1

公开(公告)日：2008-08-13

申请号：EP03425056.3

申请日：2003-01-31

Applicant: STMicroelectronics S.r.l.

Inventor： Ronsisvalle, Cesare

IPC: H03K17/567

CPC classification number: H03K17/567 ,  H01L29/7302 ,  H01L29/739 ,  H01L29/7803 ,  H01L29/7808 ,  H03K17/04166 ,  H03K17/08142

公开(公告)号：EP1443649A1

公开(公告)日：2004-08-04

申请号：EP03425056.3

申请日：2003-01-31

Applicant: STMicroelectronics S.r.l.

Inventor： Ronsisvalle, Cesare

IPC: H03K17/567

CPC classification number: H03K17/567 ,  H01L29/7302 ,  H01L29/739 ,  H01L29/7803 ,  H01L29/7808 ,  H03K17/04166 ,  H03K17/08142

Abstract: An Emitter Switching configuration is described, which comprises at least a bipolar transistor (T1) and a MOS transistor (M1) having a common conduction terminal (E1).
The Emitter Switching configuration according to the invention further comprises a Zener diode (DZ3) inserted between a control terminal (B1) of the bipolar transistor (T1) and the common conduction terminal (E1).
A monolithic structure is also described, which is effective to implement an Emitter Switching configuration according to the invention.

Abstract translation: 描述了发射器开关配置，其包括至少具有双极晶体管（T1）和具有公共导通端子（E1）的MOS晶体管（M1）。 根据本发明的发射极开关配置还包括插入在双极晶体管（T1）的控制端（B1）和公共导通端（E1）之间的齐纳二极管（DZ3）。 还描述了一种整体结构，其有效地实现根据本发明的发射器切换配置。

公开(公告)号：EP1005092A1

公开(公告)日：2000-05-31

申请号：EP98830710.4

申请日：1998-11-26

Applicant: STMicroelectronics S.r.l.

Inventor： Ronsisvalle, Cesare ,  Fallica, Piero Giorgio ,  Patti, Davide

IPC: H01L29/78 ,  H01L29/739 ,  H01L29/868 ,  H01L21/18 ,  H01L21/762 ,  H01L21/32

CPC classification number: H01L29/7802 ,  H01L21/762 ,  H01L29/0653

Abstract: PN junction structure comprising a first junction region (1) of a first conductivity type, and a second junction region (2) of a second conductivity type, characterized in that between said first and second junction regions (1,2) a grid of buried insulating materials regions (6;6A;6B;6C) is provided. The structure is applied to a MOS-based device. A method for its manufacturing is proposed.

Abstract translation: PN结结构，其包括第一导电类型的第一结区（1）和第二导电类型的第二结区（2），其特征在于，在所述第一和第二连接区域（1,2）之间埋设栅格 提供绝缘材料区域（6; 6A; 6B; 6C）。 该结构应用于基于MOS的器件。 提出了一种制造方法。