公开(公告)号：EP1043626A1

公开(公告)日：2000-10-11

申请号：EP99830195.6

申请日：1999-04-06

Applicant: STMicroelectronics S.r.l.

Inventor： Romeo, Carmelo ,  Canestrari, Paolo ,  Ruffoni, Roberto

IPC: G03F1/14 ,  G03F7/20

CPC classification number: G03F7/70433 ,  G03F1/36 ,  G03F7/70891

Abstract: In a photolithographic process using a photolithographic mask having opaque mask areas and transparent mask areas, the opaque mask areas corresponding to a pattern to be transferred onto a semiconductor wafer to form on the wafer a pattern of active structures, a method for improving the performance of the photolithographic equipment and for increasing the lifetime of the optics thereof characterized by providing auxiliary opaque mask areas (2;3;4) in areas of the mask not covered by active opaque mask areas (1), so as to reduce a transmission factor of the mask.

Abstract translation: 在使用具有不透明掩模区域和透明的掩膜区域光刻掩模的光刻工艺，不透明掩模区域对应的图案到半导体晶片被转移到形成在晶片上的活性结构的图案，为了提高的性能的方法 光刻设备和用于其通过提供辅助不透明掩模区域为特征的提高光学器件的寿命（2; 3; 4）在所述掩模的区域不被活性不透明掩模区域（1）覆盖，以便减小的透射系数 掩模。