Abstract:
A microfluidic device for nucleic acid analysis includes a monolithic semiconductor body (13), a microfluidic circuit (10), at least partially accommodated in the monolithic semiconductor body (13), and a micropump (11). The microfluidic circuit (10) includes a sample preparation channel (18) formed on the monolithic semiconductor body (13) and at least one microfluidic channel (20, 22) buried in the monolithic semiconductor body (13). The micropump (11), includes a plurality of sealed chambers (40) provided with respective openable sealing elements (41) and having a first pressure therein that is different from a second pressure in the microfluidic circuit (10). In addition, the micropump (11) and the microfluidic circuit (10) are configured so that opening the openable sealing elements (41) provides fluidic coupling between the respective chambers (40) and the microfluidic circuit (10). The openable sealing elements (41) are integrated in the monolithic semiconductor body (13).
Abstract:
A microfluidic device for nucleic acid analysis includes a monolithic semiconductor body (13), a microfluidic circuit (10), at least partially accommodated in the monolithic semiconductor body (13), and a micropump (11). The microfluidic circuit (10) includes a sample preparation channel (18) formed on the monolithic semiconductor body (13) and at least one microfluidic channel (20, 22) buried in the monolithic semiconductor body (13). The micropump (11), includes a plurality of sealed chambers (40) provided with respective openable sealing elements (41) and having a first pressure therein that is different from a second pressure in the microfluidic circuit (10). In addition, the micropump (11) and the microfluidic circuit (10) are configured so that opening the openable sealing elements (41) provides fluidic coupling between the respective chambers (40) and the microfluidic circuit (10). The openable sealing elements (41) are integrated in the monolithic semiconductor body (13).
Abstract:
The vertical conduction electronic power device (51) is formed by a body (70) delimited by a first and a second surface (70A, 70B) and having an epitaxial layer (54), of semiconductor material, and a substrate (90). The epitaxial layer is delimited by the first surface (70A) of the body and the substrate is delimited by the second surface (70B) of the body; the epitaxial layer houses at least a first and a second conduction region (56, 60) having a first type of doping (N) and a plurality of insulated-gate regions (59), which extend within the epitaxial layer (54). The substrate (90) has at least one silicide region (91), which extends starting from the second surface (70B) of the body (70) towards the epitaxial layer.