公开(公告)号：EP1840901A1

公开(公告)日：2007-10-03

申请号：EP06425223.2

申请日：2006-03-31

Applicant: STMicroelectronics S.r.l.

Inventor： Martinelli, Andrea ,  Schippers Stefan ,  Onorato Marco

IPC: G11C11/56

CPC classification number: G11C11/5628 ,  G11C16/10 ,  G11C2211/5621

Abstract: Method for programming a memory device (30) of the type comprising a matrix of memory cells (35) divided in buffers of cells (35) capacitively uncoupled from each other, the method comprising the steps of:
- first programming of said cells (35) belonging to a buffer (B);
- second programming of said cells (35) belonging to said buffer (B);
said step of first programming occurs with a ramp gate voltage having first pitch (p1) and programs said cells of said buffer (B) with higher threshold distribution and said step of second programming occurs with a ramp gate voltage having pitch (p2) lower than the pitch (p1).
The invention also relates to a memory device suitable for implementing the method proposed.

Abstract translation: 用于编程的类型，其包括存储单元分成（35）细胞的缓冲器的矩阵（35）从海誓山盟电容去耦的存储器设备（30）的方法，该方法包括以下步骤： - 所述细胞的第一编程（35 ）属于缓冲液（B）; - 所述细胞属于所述缓冲液（B）第二编程（35）; 第一编程的所述步骤与具有第一间距（P1）的斜坡的栅极电压发生和方案所述带具有斜坡栅极电压间距（P2）发生，并且所述缓冲器（B）具有更高的阈值分布的细胞第二编程的所述步骤低于 的间距（P1）。 因此本发明涉及一种适合于实施所提出的方法的存储装置。