Abstract:
Described herein is an assembly (30) of an integrated device (1) and of a cap (32) coupled to the integrated device; the integrated device (1) is provided with at least a first and a second region (16, 17) to be fluidically accessed from outside, and the cap (32) has an outer portion (32a) provided with at least a first and a second inlet port (35, 36) in fluid communication with the first and second regions (16, 17). In particular, the first and second regions (16, 17) are arranged on a first outer face (20a), or on respective adjacent outer faces (20a, 20c), of the integrated device (1), and an interface structure (38) is set between the integrated device (1) and the outer portion (32a) of the cap (32), and is provided with a channel arrangement (39, 40) for routing the first and second regions (16, 17) towards the first and second inlets (35, 36).
Abstract:
A semiconductor package comprising a substrate (20) and a damage-sensitive device (21), comprising a package substrate core (14) having an upper and a lower surface (14a, 14b), at least one pair of metal layers (12a, 12b, 13a, 13b) coating said upper and lower surfaces (14a, 14b) of the package substrate core (14); one pair of solder mask layers (11a, 11b) coating the outer metal layers (12a, 12b) of the at least one pair of metal layers (12a, 12b, 13a, 13b); and a plurality of vias (19) formed across the package substrate core (14) and the at least one pair of metal layers (12a, 12b, 13a, 13b) and a damage-sensitive device mounted on top of the upper solder mask layer. Advantageously, the plurality of vias (19) is substantially distributed according to a homogeneous pattern in an area (21 a) that is to be covered by the damage-sensitive device (21), a plurality of vias (19) being positioned so that the vias substantially coincide with an outline of said damage-sensitive device (21) that the semiconductor package substrate (20) is intended to support. A method for the production of such semiconductor package substrate is also described.
Abstract:
A semiconductor package substrate (20) suitable for supporting a damage-sensitive device (21), comprising a package substrate core (14) having an upper and a lower surface (14a, 14b), at least one pair of metal layers (12a, 12b, 13a, 13b) coating said upper and lower surfaces (14a, 14b) of the package substrate core (14); one pair of solder mask layers (11a, 11b) coating the outer metal layers (12a, 12b) of the at least one pair of metal layers (12a, 12b, 13a, 13b); and a plurality of vias (19) formed across the package substrate core (14) and the at least one pair of metal layers (12a, 12b, 13a, 13b). Advantageously, the plurality of vias (19) is substantially distributed according to a homogeneous pattern in an area (21a) that is to be covered by the damage-sensitive device (21). A method for the production of such semiconductor package substrate is also described.