公开(公告)号：EP1306851A1

公开(公告)日：2003-05-02

申请号：EP01830667.0

申请日：2001-10-24

Applicant: STMicroelectronics S.r.l.

Inventor： Torrisi, Salvatore ,  Siberno, Giampiero ,  Demange, Nicolas

IPC: G11C11/22

CPC classification number: G11C11/22

Abstract: A method of sensing a ferroelectric non-volatile information storage units ( 103 ) comprising two ferroelectric storage capacitors ( Cc,Ct ) in mutually opposite polarization states, and a sensing circuit for actuating the method. The method comprises the steps of: making a voltage applied across the two storage capacitors substantially zero ( Ph1 ); starting from this condition, progressively increasing the voltage applied thereacross ( Ph2 ) by supplying a prescribed current, until a first one ( Ct ) of the two storage capacitors approaches a condition of polarization state reversal, thereby the voltage applied across said first storage capacitor starts to decrease with respect to the voltage applied across the second storage capacitor ( Cc ); and amplifying a voltage difference between the voltages applied across the two storage capacitors by making the voltage applied across the first storage capacitor substantially zero and the voltage applied across the second storage capacitor substantially equal to a non-zero voltage ( VDD ) corresponding to a logic state opposite to a logic state corresponding to the zero voltage.

Abstract translation: 感测铁电非易失性信息存储单元（103）在相互相反的偏振态包括两个铁电存储电容器（CC，CT）的方法，和用于致动方法的感测电路。 该方法包括如下步骤：使得在所述两个辅助电容基本为零（PH1）施加的电压; 从该状态开始，通过供给规定的电流逐渐增大的电压施加通过（Ph2的），直到两个存储电容器中的第一个（CT）途径偏振状态反转的状态，从而横跨所述第一存储电容器开始施加的电压 相对于横过所述第二存储电容器（CC）施加的电压降低; 并且通过使对应于逻辑跨第一存储电容器基本上为零和跨过第二存储电容器基本上等于一个非零电压（VDD）施加的电压施加的电压放大跨越两个存储电容器上的电压应用之间的电压差 状态相反逻辑状态对应于零电压。