公开(公告)号：EP1855379A1

公开(公告)日：2007-11-14

申请号：EP06425321.4

申请日：2006-05-12

Applicant: STMicroelectronics S.r.l.

Inventor： Vaiana, Michele ,  Gramegna, Giuseppe

IPC: H03F1/30

CPC classification number: H03F1/0261 ,  H03F1/302 ,  H03F2200/18 ,  H03F2200/447 ,  H03F2200/456 ,  H03F2200/462 ,  H03F2200/78

Abstract: Precision and reliability of a current limited mode output power control of an RF amplifier is significantly enhanced by sensing the base current of the current controlled output power transistor (BJT or HBT) and comparing it with a certain control current that is normalized by scaling it in function of the current gain (β) of a bipolar junction transistor of similar characteristics of the output power transistor. Fabrication process spread of current gain figures of bipolar junction transistors is effectively compensated. Moreover, by employing a band-gap temperature compensation control current that is eventually β-scaled before comparing it with the sensed base current of the output power transistor, the output power may be effectively controlled and maintained constant over temperature as well as process spread variations.

Abstract translation: 通过检测电流控制输出功率晶体管（BJT或HBT）的基极电流并将其与通过对其进行归一化归一化的特定控制电流进行比较，可显着提高RF放大器电流限制模式输出功率控制的精度和可靠性 具有输出功率晶体管类似特性的双极结型晶体管的电流增益（²）的函数。 双极结型晶体管的电流增益图的制造工艺扩展得到有效的补偿。 此外，通过采用在将其与输出功率晶体管的检测到的基极电流进行比较之前最终“缩放”的带隙温度补偿控制电流，可以有效地控制输出功率并保持恒定的温度以及工艺扩展变化 。