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1.发明授权A process for the fabrication of semiconductor devices having various buried regions 失效一种用于生产具有不同类型的掩埋的掺杂区域的半导体器件的过程
公开(公告)号：EP0809286B1
公开(公告)日：2003-10-01
申请号：EP96830280.2
申请日：1996-05-14
Applicant: STMicroelectronics S.r.l.
Inventor： Palmieri, Michele , Galbiati, Paola , Vecchi, Lodovica
IPC: H01L21/8249 , H01L21/74
CPC classification number: H01L21/266 , H01L21/74 , H01L21/8249
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