公开(公告)号：EP3171387A1

公开(公告)日：2017-05-24

申请号：EP16194697.5

申请日：2016-10-19

Applicant: STMicroelectronics S.r.l. ,  STMicroelectronics Pte Ltd.

Inventor： PATTI, Davide Giuseppe ,  KIM, Myung Sung

IPC: H01J9/02 ,  H01J21/10

CPC classification number: H01J19/02 ,  H01J9/025 ,  H01J9/18 ,  H01J21/04 ,  H01J21/105 ,  H01J21/20 ,  H01J2209/012 ,  H01J2209/02

Abstract: A vacuum integrated electronic device (120) has an anode region (101) of conductive material; an insulating region (102, 104) on top of the anode region; a cavity (54) extending through the insulating region and having a sidewall (53); and a cathode region (109). The cathode region has a tip portion (51, 52) extending peripherally within the cavity, adjacent to the sidewall of the cavity. The cathode region is formed by tilted deposition, carried out at an angle of 30-60° with respect to a perpendicular to the surface of device.

Abstract translation: 真空集成电子器件（120）具有导电材料的阳极区域（101） 在所述阳极区域的顶部上的绝缘区域（102,104） 延伸穿过绝缘区域并具有侧壁（53）的空腔（54）; 和阴极区（109）。 阴极区具有在空腔内沿周边延伸的邻近空腔侧壁的尖端部分（51,52）。 阴极区域通过倾斜沉积形成，相对于器件表面的垂线以30-60°的角度进行。