公开(公告)号：EP1710843A1

公开(公告)日：2006-10-11

申请号：EP05425194.7

申请日：2005-04-04

Applicant: STMicroelectronics S.r.l. ,  STMicroelectronics S.A.

Inventor： Saggio, Mario Giuseppe ,  Longo Minnolo, Antonino ,  Germana', Rosalia

IPC: H01L29/78 ,  H01L27/088

CPC classification number: H01L29/0634 ,  H01L21/823487 ,  H01L27/088 ,  H01L29/1095 ,  H01L29/7803 ,  H01L29/7811

Abstract: The integrated power device comprises a semiconductor body (41, 42) of a first conductivity type comprising a first region (43) accommodating a start-up structure (14), and a second region (44) accommodating a power structure (18). The two structures (14, 18) are separated from one another by an edge structure (30) and are arranged in a mirror configuration with respect to a symmetry line of the edge structure (30). Both the start-up structure (14) and the power structure (18) are obtained using MOSFET devices. More in particular, both MOSFET devices are multi-drain MOSFET devices, having mesh regions (46, 47), source regions (50, 51) and gate regions (60, 61) separated from one another. In addition, both MOSFET devices have drain regions (42a, 42b) delimited by columns (52, 53) that repeat periodically at a fixed distance. Between the two MOSFET devices there is an electrical insulation of at least 25 V.

Abstract translation: 集成功率器件包括第一导电类型的半导体本体（41,42），包括容纳起动结构（14）的第一区域（43）和容纳功率结构（18）的第二区域（44）。 两个结构（14,18）通过边缘结构（30）彼此分离，并且相对于边缘结构（30）的对称线布置成镜子结构。 使用MOSFET器件获得启动结构（14）和功率结构（18）。 更具体地，两个MOSFET器件都是具有网格区域（46,47），源极区域（50,51）和彼此分离的栅极区域（60,61）的多漏极MOSFET器件。 此外，两个MOSFET器件具有由以固定距离周期性重复的列（52,53）限定的漏极区域（42a，42b）。 在两个MOSFET器件之间存在至少25V的电绝缘。

公开(公告)号：EP1710843B1

公开(公告)日：2012-09-19

申请号：EP05425194.7

申请日：2005-04-04

Applicant: STMicroelectronics Srl ,  STMicroelectronics S.A.

Inventor： Saggio, Mario Giuseppe ,  Longo Minnolo, Antonino ,  Germana', Rosalia

IPC: H01L29/78 ,  H01L27/088 ,  H01L29/10 ,  H01L29/06

CPC classification number: H01L29/0634 ,  H01L21/823487 ,  H01L27/088 ,  H01L29/1095 ,  H01L29/7803 ,  H01L29/7811