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1.SOI device with contact trenches formed during epitaxial growing 有权
Title translation: SOI器件具有由外延沉积掩埋触点制成公开(公告)号:EP1873821B1
公开(公告)日:2015-11-11
申请号:EP06116123.8
申请日:2006-06-27
Applicant: STMicroelectronics Srl
Inventor: Montanini, Pietro , Ammendola, Giuseppe , Depetro, Riccardo , Mottura, Marta
IPC: H01L21/74 , H01L21/84 , H01L21/762 , H01L27/12
CPC classification number: H01L21/84 , H01L21/26586 , H01L21/3226 , H01L21/76264 , H01L27/1207