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1.Process for bonding and electrically connecting microsystems integrated in several distinct substrates 有权
Title translation: 该方法以结合多个不同的衬底的集成微系统和电连接公开(公告)号:EP1296374B1
公开(公告)日:2012-09-05
申请号:EP01830590.4
申请日:2001-09-14
Applicant: STMicroelectronics Srl , Hewlett-Packard Company
Inventor: Mastromatteo, Ubaldo , Bombonati, Mauro , Morin, Daniela , Mottura, Marta , Marchi, Mauro
CPC classification number: B81C1/00269 , H01L21/185 , H01L24/13 , H01L24/16 , H01L24/17 , H01L24/81 , H01L24/94 , H01L2224/0231 , H01L2224/02313 , H01L2224/0401 , H01L2224/05124 , H01L2224/05181 , H01L2224/05624 , H01L2224/10126 , H01L2224/10135 , H01L2224/13021 , H01L2224/1308 , H01L2224/13082 , H01L2224/13124 , H01L2224/13164 , H01L2224/81136 , H01L2224/81139 , H01L2224/812 , H01L2224/81201 , H01L2224/81385 , H01L2224/81801 , H01L2924/00013 , H01L2924/01006 , H01L2924/01013 , H01L2924/01022 , H01L2924/01024 , H01L2924/01029 , H01L2924/01033 , H01L2924/01046 , H01L2924/01073 , H01L2924/01078 , H01L2924/01322 , H01L2924/14 , H01L2924/00014 , H01L2224/13099 , H01L2224/29099 , H01L2924/013
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2.SOI device with contact trenches formed during epitaxial growing 有权
Title translation: SOI器件具有由外延沉积掩埋触点制成公开(公告)号:EP1873821B1
公开(公告)日:2015-11-11
申请号:EP06116123.8
申请日:2006-06-27
Applicant: STMicroelectronics Srl
Inventor: Montanini, Pietro , Ammendola, Giuseppe , Depetro, Riccardo , Mottura, Marta
IPC: H01L21/74 , H01L21/84 , H01L21/762 , H01L27/12
CPC classification number: H01L21/84 , H01L21/26586 , H01L21/3226 , H01L21/76264 , H01L27/1207
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