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    PROCESS FOR MANUFACTURING MEMS DEVICES HAVING BURIED CAVITIES AND MEMS DEVICE OBTAINED THEREBY
    1.
    发明公开
    PROCESS FOR MANUFACTURING MEMS DEVICES HAVING BURIED CAVITIES AND MEMS DEVICE OBTAINED THEREBY 有权
    用于生产MEMS器件具有掩埋腔和这样制作的MEMS器件

    公开(公告)号：EP2462050A1

    公开(公告)日：2012-06-13

    申请号：EP10737938.0

    申请日：2010-08-05

    Applicant: STMicroelectronics Srl

    Inventor： CORONA, Pietro ,  LOSA, Stefano ,  GELMI, Ilaria ,  CAMPEDELLI, Roberto

    IPC: B81C1/00

    CPC classification number: B81C1/00476 ,  B81B2201/0264 ,  B81B2203/0109 ,  B81B2203/0127 ,  B81C1/00047 ,  B81C2201/0109

    Abstract: A process for manufacturing a MEMS device, wherein a bottom silicon region (4b) is formed on a substrate and on an insulating layer (3); a sacrificial region (5a) of dielectric is formed on the bottom region; a membrane region (21), of semiconductor material, is epitaxially grown on the sacrificial region; the membrane region is dug as far as the sacrificial region so as to form through trenches (15); the side wall and the bottom of the through trenches are completely coated in a conformal way with a porous material layer (16); at least one portion of the sacrificial region is selectively removed through the porous material layer and forms a cavity (18); and the through trenches are filled with filling material (20a) so as to form a monolithic membrane suspended above the cavity (18).

    Abstract translation: 一种用于制造微机电系统器件，worin底部硅区域形成在基板上并与绝缘层的过程; 电介质的牺牲区域形成在底部区域; 膜区域，半导体材料制成的，外延生长在牺牲区域; 膜区域被向下挖至牺牲区域，以便形成通孔的; 所述侧壁和所述孔的底部完全被呼叫涂覆在多孔材料层的共形方式; 所述牺牲区域的至少一个部分通过多孔材料层选择性地去除，并且形成的空腔; 和孔中填充有填充材料，以形成悬浮在腔上方的整体式膜。 其它实施方案涉及MEMS器件和压力传感器。

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