Patent search ap:("STMicroelectronics Srl") AND inv:"Cerofolini Page Gianfranco"

1.

发明授权
Hosting structure of nanometric elements and corresponding manufacturing method 有权
Title translation: 用于接收纳米元素和它们的制备方法结构

公开(公告)号：EP1630881B1

公开(公告)日：2011-11-16

申请号：EP04425648.5

申请日：2004-08-31

Applicant: STMicroelectronics Srl

Inventor： Mascolo, Danilo , Cerofolini, Gianfranco , Rizzotto, Gianguido

IPC: H01L51/00 , H01L51/40 , G11C13/02

CPC classification number: H01L51/0021 , G11C2213/77 , H01L27/285 , H01L51/0595 , Y10S257/90 , Y10S977/712 , Y10S977/72 , Y10S977/722 , Y10S977/723

2.

发明授权
Method for realising an electric linkage in a semiconductor electronic device between a nanometric circuit architecture and standard electronic components 有权
Title translation: 一种用于实现在一个半导体电子器件的纳米电路结构和标准电子部件之间的电连接方法

公开(公告)号：EP1741671B1

公开(公告)日：2010-09-15

申请号：EP05425488.3

申请日：2005-07-08

Applicant: STMicroelectronics Srl

Inventor： Mascolo, Danilo , Cerofolini, Gianfranco

IPC: H01L21/768 , G11C13/02

CPC classification number: H01L21/76838 , B82B3/00 , B82Y10/00 , B82Y30/00 , B82Y40/00 , G11C2213/81 , H01L21/76816 , H01L2221/1094 , H01L2924/0002 , H01L2924/00

3.

发明授权
MOS transistor and method of manufacturing 有权
Title translation: MOS晶体管及其制造方法

公开(公告)号：EP1278234B1

公开(公告)日：2012-01-11

申请号：EP01127923.9

申请日：2001-11-23

Applicant: STMicroelectronics Srl

Inventor： Cerofolini, Gianfranco , Ferla, Giuseppe

IPC: H01L21/28 , H01L29/51

CPC classification number: H01L21/28167 , H01L29/51

4.

发明授权
Method for realizing a multispacer structure, use of said structure as a mould and method for producing circuital architectures using said mould 有权
Title translation: 用于生产具有多个线包围方法型材结构，使用这种结构的作为用于生产电路的结构在此模板和方法

公开(公告)号：EP1772773B1

公开(公告)日：2011-06-29

申请号：EP05425698.7

申请日：2005-10-06

Applicant: STMicroelectronics Srl

Inventor： Mascolo, Danilo , Cerofolini, Gianfranco

IPC: G03F7/00 , H01L27/10

CPC classification number: H01L21/32139 , B82Y10/00 , B82Y40/00 , G03F7/0002 , G03F7/0017 , H01L27/10 , Y10S438/946 , Y10S438/947 , Y10S977/887 , Y10S977/888

5.

发明授权
Method for realising an electric linkage in a semiconductor electronic device between a nanometric circuit architecture and standard electronic components 有权
Title translation: 一种用于实现在一个半导体电子器件的纳米电路结构和标准电子部件之间的电连接方法

公开(公告)号：EP1742226B1

公开(公告)日：2010-09-15

申请号：EP05425489.1

申请日：2005-07-08

Applicant: STMicroelectronics Srl

Inventor： Cerofolini, Gianfranco , Mascolo, Danilo

IPC: G11C13/02 , H01L21/768 , B82B3/00

CPC classification number: H01L21/76816 , B82B3/00 , B82Y10/00 , B82Y30/00 , B82Y40/00 , G03F7/70916 , G11C2213/81 , H01L21/76838 , H01L2924/0002 , Y10S977/762 , H01L2924/00

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