公开(公告)号：EP2333573B1

公开(公告)日：2012-10-24

申请号：EP10193056.8

申请日：2010-11-30

Applicant: STMicroelectronics Srl

Inventor： Paci, Dario ,  Iuliano, Paolo ,  Riva, Caterina ,  Morelli, Marco

IPC: G01R33/04 ,  G01R33/00 ,  G01R33/07

CPC classification number: G01R33/04 ,  G01R33/0005 ,  G01R33/0047 ,  G01R33/0052 ,  G01R33/072

公开(公告)号：EP2333573A1

公开(公告)日：2011-06-15

申请号：EP10193056.8

申请日：2010-11-30

Applicant: STMicroelectronics Srl

Inventor： Paci, Dario ,  Iuliano, Paolo ,  Riva, Caterina ,  Morelli, Marco

IPC: G01R33/04 ,  G01R33/00 ,  G01R33/07

CPC classification number: G01R33/04 ,  G01R33/0005 ,  G01R33/0047 ,  G01R33/0052 ,  G01R33/072

Abstract: The integrated magnetic sensor (19) for detecting an external magnetic field, is formed by a body (21) of semiconductor material having a surface (25); an insulating layer (28, 36, 37) covering the body of semiconductor material; a magnetically sensitive region, for example a Hall cell (22), extending inside the body; and a concentrator (33) of ferromagnetic material, extending on the Hall cell and having a planar portion (35) extending parallel to the surface of the substrate on the insulating layer (28, 36, 37). The concentrator (33) terminates with a tip (34) protruding peripherically from, and transversely to, the planar portion (35) toward the Hall cell (22). When the magnetically sensitive region is a sensing coil (3a-3d) of a fluxgate sensor, it is formed on the substrate, embedded in the insulating layer, and the tip (47) of the concentrator can reach as far as the sensing coil.

Abstract translation: 对于外部磁场的检测集成磁性传感器（19），由具有表面（25）的半导体材料的本体（21）形成的; 绝缘层（28，36，37）覆盖的半导体材料的主体的; 磁敏感区域，例如霍尔小区（22）的主体的内部延伸; 和铁磁材料的浓缩器（33），扩展在霍尔电池和具有绝缘层（28，36，37）在基板的表面上的平面部分（35）平行延伸。 集中器（33）与来自peripherically突出的尖端（34）终止，且横向于朝向霍尔元件（22）的平面部分（35）。 当磁性敏感区域是磁通门传感器的感测线圈（3A-3D），它形成在基片，嵌入绝缘层中，和所述集中器的尖端（47）可以尽可能的传感线圈达到。