Patent search ap:("STMicroelectronics Srl") AND inv:"Resta Page Claudio"

1.

发明授权
Phase-change memory device with biasing of deselected bit lines 有权
Title translation: 从非选择的位线具有偏压相变存储器件

公开(公告)号：EP1511042B1

公开(公告)日：2012-12-05

申请号：EP03077667.8

申请日：2003-08-27

Applicant: STMicroelectronics Srl

Inventor： Bedeschi, Ferdinando , Resta, Claudio

IPC: G11C13/00 , G11C7/12

CPC classification number: G11C7/12 , G11C13/0004 , G11C13/0026 , G11C2213/79

2.

发明授权
Phase change memory device with overvoltage protection and method for protecting a phase change memory device against overvoltages 有权
Title translation: 相变存储器以浪涌保护和保护方法，用于相变存储器与浪涌保护

公开(公告)号：EP1538632B1

公开(公告)日：2010-06-30

申请号：EP03425728.7

申请日：2003-11-12

Applicant: STMicroelectronics Srl , Universita' Degli Studi Di Pavia

Inventor： Bedeschi, Ferdinando , Resta, Claudio , Torelli, Guido

IPC: G11C11/34 , G11C7/12

CPC classification number: G11C13/0004 , G11C7/12 , G11C13/0026 , G11C13/004 , G11C13/0059 , G11C2013/0054 , G11C2213/79

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