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    Method of storing an indication of whether a memory location in phase change memory needs programming
    3.
    发明公开
    Method of storing an indication of whether a memory location in phase change memory needs programming 审中-公开
    一种用于存储是否在相变存储器的存储位置的指示方法需要一种编程

    公开(公告)号：EP2204815A1

    公开(公告)日：2010-07-07

    申请号：EP09180925.1

    申请日：2009-12-30

    Applicant: STMicroelectronics Srl

    Inventor： Wu, Patrick ,  Fackenthal, Richard ,  Bedeschi, Ferdinando ,  Jagasivamani, Meenatchi ,  Donze', Enzo Michele

    IPC: G11C16/02

    CPC classification number: G11C13/0069 ,  G11C13/0004 ,  G11C13/0064 ,  G11C2013/0076

    Abstract: A phase change memory includes a float buffer which stores the result of a comparison between the current state of data in the phase change memory cells and an intended next state of each of those cells. The float buffer indicates which cells need to be programmed in order to achieve the new states and which cells happen to already be in the new states. Then, after programming of the cells, the float buffer indicates which cells still need to be programmed. Thus, a control stage uses the information in the float buffer to program only those cells whose states need to be changed.

    Abstract translation: 一种相变存储器包括存储在相变存储器单元中的数据的当前状态之间和每一那些细胞的预期的下一个状态的比较结果float缓冲区。 浮动缓冲指示哪些细胞需要，以实现新的状态和细胞发生已经在新州进行编程。 然后，将细胞的编程后，浮缓冲指示哪些细胞仍然需要进行编程。 因此，控制阶段使用在浮子缓冲器中的信息来唯一的那些细胞其状态需要改变编程。

    Method of accelerating phase change memory writes
    5.
    发明公开
    Method of accelerating phase change memory writes 有权
    加速相变存储器写入的方法

    公开(公告)号：EP2204816A3

    公开(公告)日：2010-07-28

    申请号：EP09180933.5

    申请日：2009-12-30

    Applicant: STMicroelectronics Srl

    Inventor： Jagasivamani, Meenatchi ,  Ko, Anthony ,  Fackenthal, Rich E. ,  Bedeschi, Ferdinando ,  Donze', Enzo ,  Ravi, Gutala

    IPC: G11C16/02

    CPC classification number: G11C13/0004

    Abstract: In a phase change memory (100), the memory array may be written in relatively small chunks. The writing of data to the array and, particularly, the writing of set data, may be accelerated using a hardware accelerator (14). The hardware accelerator includes an edge detector (17) which detects a short duration signal pulse to trigger the writing of the set data to a cell. As a result, the writing of data may be accelerated, reducing the time to write in some cases.

    Abstract translation: 在相变存储器（100）中，存储器阵列可以以相对较小的块写入。 使用硬件加速器（14）可以加速向阵列写入数据，特别是写入设置数据。 硬件加速器包括边缘检测器（17），其检测短持续时间信号脉冲以触发将设置数据写入单元。 因此，数据的写入可能会加速，从而减少了在某些情况下写入的时间。

    Method of accelerating phase change memory writes
    6.
    发明公开
    Method of accelerating phase change memory writes 有权
    维尔法赫尔·祖尔·贝斯勒伦贡

    公开(公告)号：EP2204816A2

    公开(公告)日：2010-07-07

    申请号：EP09180933.5

    申请日：2009-12-30

    Applicant: STMicroelectronics Srl

    Inventor： Jagasivamani, Meenatchi ,  Ko, Anthony ,  Fackenthal, Rich E. ,  Bedeschi, Ferdinando ,  Donze', Enzo ,  Ravi, Gutala

    IPC: G11C16/02

    CPC classification number: G11C13/0004

    Abstract: In a phase change memory (100), the memory array may be written in relatively small chunks. The writing of data to the array and, particularly, the writing of set data, may be accelerated using a hardware accelerator (14). The hardware accelerator includes an edge detector (17) which detects a short duration signal pulse to trigger the writing of the set data to a cell. As a result, the writing of data may be accelerated, reducing the time to write in some cases.

    Abstract translation: 在相变存储器（100）中，存储器阵列可以被写入相对较小的块。 可以使用硬件加速器（14）来加速将数据写入阵列，特别是写入设置数据。 硬件加速器包括边缘检测器（17），其检测短持续时间信号脉冲以触发将设置数据写入单元。 因此，可能会加速数据的写入，从而在某些情况下减少写入时间。

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