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1.发明授权Process for CMOS devices of non volatile memories and vertical bipolar transistors with high gain. 有权一种用于制造CMOS晶体管和垂直双极晶体管的非易失性存储器中的具有高增益因子处理
公开(公告)号：EP1071133B1
公开(公告)日：2010-04-21
申请号：EP99830468.7
申请日：1999-07-21
Applicant: STMicroelectronics Srl
Inventor： Vendrame, Loris , Ghezzi, Paolo
IPC: H01L27/105 , H01L21/8249
CPC classification number: H01L29/0692 , H01L21/8249 , H01L29/7322
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公开(公告)号：EP1640994B1
公开(公告)日：2010-04-07
申请号：EP04104595.6
申请日：2004-09-22
Applicant: STMicroelectronics Srl
Inventor： Bedeschi, Ferdinando , Pellizzer, Fabio , Benvenuti, Augusto , Vendrame, Loris , Zuliani, Paola
CPC classification number: G11C13/0004 , G11C13/003 , G11C2213/76 , G11C2213/79
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