公开(公告)号：EP2204815A1

公开(公告)日：2010-07-07

申请号：EP09180925.1

申请日：2009-12-30

Applicant: STMicroelectronics Srl

Inventor： Wu, Patrick ,  Fackenthal, Richard ,  Bedeschi, Ferdinando ,  Jagasivamani, Meenatchi ,  Donze', Enzo Michele

IPC: G11C16/02

CPC classification number: G11C13/0069 ,  G11C13/0004 ,  G11C13/0064 ,  G11C2013/0076

Abstract: A phase change memory includes a float buffer which stores the result of a comparison between the current state of data in the phase change memory cells and an intended next state of each of those cells. The float buffer indicates which cells need to be programmed in order to achieve the new states and which cells happen to already be in the new states. Then, after programming of the cells, the float buffer indicates which cells still need to be programmed. Thus, a control stage uses the information in the float buffer to program only those cells whose states need to be changed.

Abstract translation: 一种相变存储器包括存储在相变存储器单元中的数据的当前状态之间和每一那些细胞的预期的下一个状态的比较结果float缓冲区。 浮动缓冲指示哪些细胞需要，以实现新的状态和细胞发生已经在新州进行编程。 然后，将细胞的编程后，浮缓冲指示哪些细胞仍然需要进行编程。 因此，控制阶段使用在浮子缓冲器中的信息来唯一的那些细胞其状态需要改变编程。