METHOD FOR MANUFACTURING SEMICONDUCTOR LIGHT EMITTING DEVICE
    2.
    发明公开
    METHOD FOR MANUFACTURING SEMICONDUCTOR LIGHT EMITTING DEVICE 审中-公开
    VERFAHREN ZUR HERSTELLUNG EINES LICHTEMITTIERENDEN HALBLEITERBAUELENTS

    公开(公告)号:EP3101698A4

    公开(公告)日:2017-06-28

    申请号:EP15743494

    申请日:2015-01-20

    Abstract: A method for producing a semiconductor light-emitting device comprising a substrate, an element and an encapsulating material as constituent members, comprising a first step of providing the substrate with the element; a second step of potting un uncured encapsulating material onto the substrate to cover the element; and a third step of curing the potted encapsulating material in such a manner that all of the following formulae (1), (2) and (3) are satisfied when the absorbances which a cured encapsulating material having a thickness of t [nm] has at wavelengths of 380 nm, 316 nm and 260 nm are represented by Abs A (t), Abs B (t) and Abs C (t), respectively and the light transmittance thereof at 380 nm is represented by T(t): T 1.7 ‰¥ 90 % Abs B t ˆ’ Abs A t

    Abstract translation: 一种半导体发光元件的制造方法,其特征在于,具备:第一工序,在所述基板上形成所述元件; 将未固化的封装材料封装在基板上以覆盖元件的第二步骤; 以及第三步骤,以使得固化的具有厚度t [nm]的密封材料的吸光度满足以下所有式(1),(2)和(3)的方式固化所述封装材料 在380nm,316nm和260nm的波长分别由Abs A(t),Abs B(t)和Abs C(t)表示,并且其在380nm处的光透射率由T(t)表示:T 1.7‰¥90%Abs B t'Abs A t <0.011 t Abs C t'Abs A t <0.125 t。

    METHOD FOR PRODUCING SEMICONDUCTOR LIGHT-EMITTING DEVICE

    公开(公告)号:EP3176840A4

    公开(公告)日:2018-01-24

    申请号:EP15826730

    申请日:2015-07-27

    CPC classification number: H01L33/56 C08G77/04 C09D183/06

    Abstract: A method for producing a semiconductor light-emitting device comprising: a step of applying a silicone resin composition to a surface of a semiconductor light-emitting element, and a step of forming an encapsulating portion covering the surface of the semiconductor light-emitting element by heat curing the applied silicone resin composition; wherein the silicone resin composition comprises a silicone resin in which the constituent silicon atoms are substantially only silicon atoms to which three oxygen atoms are bonded in an amount of 60% by mass or more relative to a total mass ofsolid components in the silicone resin composition, and the heat curing is performed under conditions in which an infrared absorption spectrum peak position assigned to Si-O-Si linkages in a range from 1,000 to 1,050 cm -1 of the silicone resin before the heat curing is designated a cm -1 , and an infrared absorption spectrum peak position assigned to Si-O-Si linkages in a range from 950 to 1,050 cm -1 of the silicone resin composition after the heat curing is designated b cm -1 , satisfying 5

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