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公开(公告)号：WO2005020337A8
公开(公告)日：2005-05-12
申请号：PCT/JP2004011158
申请日：2004-08-04
Applicant: SUMITOMO ELECTRIC INDUSTRIES
Inventor： NAGAI YOUICHI , KIYAMA MAKOTO , NAKAMURA TAKAO , SAKURADA TAKASHI , AKITA KATSUSHI , UEMATSU KOJI , IKEDA AYAKO , KATAYAMA KOJI , YOSHIMOTO SUSUMU
IPC: H01L29/24 , H01L33/06 , H01L33/12 , H01L33/32 , H01L33/40 , H01L33/50 , H01L33/54 , H01L33/56 , H01L33/60 , H01L33/62 , H01L33/00
CPC classification number: H01L33/32 , H01L33/20 , H01L33/382 , H01L33/505 , H01L33/507 , H01L33/58 , H01L2224/05573 , H01L2224/16245 , H01L2224/32245 , H01L2224/45015 , H01L2224/45139 , H01L2224/45144 , H01L2224/48091 , H01L2224/48247 , H01L2224/48257 , H01L2224/73265 , H01L2224/8592 , H01L2924/00014 , H01L2924/3025 , H01L2924/00 , H01L2924/20752 , H01L2924/2076 , H01L2224/05599 , H01L2924/00011 , H01L2224/45099
Abstract: A light-emitting device is disclosed which can be produced easily because of its simple structure and is capable of stably maintaining high luminous efficiency for a long time. The light-emitting device comprises, on the side of a first major surface of a nitride semiconductor substrate (1), an n-type nitride semiconductor layer (2), a p-type nitride semiconductor layer (6) placed farther than the n-type nitride semiconductor layer (2) from the nitride semiconductor substrate (1), and a light-emitting layer (4) arranged between the n-type nitride semiconductor layer (2) and the p-type nitride semiconductor layer (6). The nitride semiconductor substrate has a resistivity of not more than 0.5 ohm.cm. The light-emitting device is mounted with the p-type nitride semiconductor layer side down, so that light is emitted through a second major surface (1a) of the nitride semiconductor substrate which is opposite to the first major surface.
Abstract translation: 公开了一种由于其结构简单而能容易地制造并且能够长时间稳定地保持高发光效率的发光器件。 发光器件在氮化物半导体衬底（1）的第一主表面上包括n型氮化物半导体层（2），比n更远的p型氮化物半导体层（6） 氮化物半导体衬底（1）的氮化物半导体层（2）和配置在n型氮化物半导体层（2）和p型氮化物半导体层（6）之间的发光层（4）。 氮化物半导体衬底的电阻率不大于0.5欧姆·厘米。 发光装置以p型氮化物半导体层一侧向下安装，使得光通过与第一主表面相对的氮化物半导体衬底的第二主表面（1a）发射。
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公开(公告)号：CA2530614A1
公开(公告)日：2006-06-20
申请号：CA2530614
申请日：2005-12-15
Applicant: SUMITOMO ELECTRIC INDUSTRIES
Inventor： KITABAYASHI HIROYUKI , SAITO HIROHISA , IKEDA AYAKO , NAGAI YOUICHI
IPC: H01L33/06 , H01L25/075 , H01L29/20 , H01L33/32 , H01L33/38 , H01L33/40 , H01L33/56 , H01L33/60 , H01L33/62
Abstract: A light emitting device having a simple structure that can be easily manufactured, attaining high light emitting efficiency stably for a long tim e is obtained, which light emitting device includes: a GaN substrate as a nitride semiconductor substrate and, on a first main surface of the nitride semiconductor substrat e, an n-type Al x Ga1-x N layer, a p-type Al x Ga1-x N layer positioned further than the n- type Al x Ga1-x N layer viewed from the nitride semiconductor substrate, and a quantum well positioned between the n-type Al x Ga1-x N layer and the p-type Al x Ga1-x N layer. In the light emitting device, specific resistance of the nitride semiconductor substrate is at most 0.5 .OMEGA..cndot.cm, the side of p-type Al x Ga1-x N layer is mounted face-down , and the light is emitted from the second main surface 1a that is opposite to the first main surface o f the nitride semiconductor substrate. The second main surface 1a of nitride semiconductor substrate has trenches formed therein.
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Patent Agency Ranking
公开(公告)号：SG145722A1
公开(公告)日：2008-09-29
申请号：SG2008058927
申请日：2004-08-04
Applicant: SUMITOMO ELECTRIC INDUSTRIES
Inventor： NAGAI YOUICHI , KIYAMA MAKOTO , NAKAMURA TAKAO , SAKURADA TAKASHI , AKITA KATSUSHI , UEMATSU KOJI , IKEDA AYAKO , KATAYAMA KOJI , YOSHIMOTO SUSUMU
IPC: H01L29/24 , H01L33/06 , H01L33/12 , H01L33/32 , H01L33/40 , H01L33/50 , H01L33/54 , H01L33/56 , H01L33/60 , H01L33/62
Abstract: Light Emitting Apparatus In order to provide light emitting devices which have simple constructions and thus can be fabricated easily, and can stably provide high light emission efficiencies for a long time period, a light emitting device includes an n-type nitride semiconductor layer(2) at a first main surface side of a nitride semiconductor substrate (1), a p-type nitride semiconductor layer (6) placed more distantly from the nitride semiconductor substrate than the n-type nitride semiconductor layer at the first main surface side and a light emitting layer (4) placed between the n-type nitride semiconductor layer and the p- type nitride semiconductor layer (6) at the first main surface side. The nitride semiconductor substrate has a resistivity of 0.5 09cm or less and the p-type nitride semiconductor layer side is down-mounted so that light is emitted from the second main surface (la) of the nitride semiconductor substrate at the opposite side from the first main surface.
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公开(公告)号：CA2488596A1
公开(公告)日：2005-06-03
申请号：CA2488596
申请日：2004-11-30
Applicant: SUMITOMO ELECTRIC INDUSTRIES
Inventor： NAGAI YOUICHI , YOSHIMOTO SUSUMU , IKEDA AYAKO , KATAYAMA KOJI , AKITA KATSUSHI , SAKURADA TAKASHI , UEMATSU KOJI , KIYAMA MAKOTO , NAKAMURA TAKAO
Abstract: A light emitting device includes a nitride semiconductor substrate with a resistivity of 0.5 .OMEGA..cndot.cm or less, an n-type nitride semiconductor layer and a p-type nitride semiconductor layer placed more distantly from the nitride semiconductor substrate than the n-type nitride semiconductor layer at a first main surface side of the nitride semiconductor substrate, and a light emitting layer placed between the n-typ e nitride semiconductor layer and the p-type nitride semiconductor layer, wherein one of the nitride semiconductor substrate and the p-type nitride semiconductor layer i s mounted at the top side which emits light and the other is placed at the down side, and a single electrode is placed at the top side. Therefore, there is provided a light emitting device which has a simple configuration thereby making it easy to fabricate, can provide a high light emission efficiency for a long time period, and can be easily miniaturized.
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公开(公告)号：CA2509785A1
公开(公告)日：2005-03-03
申请号：CA2509785
申请日：2004-08-04
Applicant: SUMITOMO ELECTRIC INDUSTRIES
Inventor： KATAYAMA KOJI , SAKURADA TAKASHI , NAKAMURA TAKAO , AKITA KATSUSHI , UEMATSU KOJI , IKEDA AYAKO , NAGAI YOUICHI , YOSHIMOTO SUSUMU , KIYAMA MAKOTO
IPC: H01L29/24 , H01L33/06 , H01L33/12 , H01L33/32 , H01L33/40 , H01L33/50 , H01L33/54 , H01L33/56 , H01L33/60 , H01L33/62 , H01L33/00
Abstract: A light-emitting device is disclosed which can be produced easily because of its simple structure and is capable of stably maintaining high luminous efficiency for a long time. The light-emitting device comprises, on the side of a first major surface of a nitride semiconductor substrate (1), an n-type nitride semiconductor layer (2), a p-type nitride semiconductor layer (6) placed farther than the n-type nitride semiconductor layer (2) from the nitride semiconductor substrate (1), and a light-emitting layer (4) arranged between the n-type nitride semiconductor layer (2) and the p-type nitride semiconductor layer (6). The nitride semiconductor substrate has a resistivi ty of not more than 0.5 .OMEGA..cndot.cm. The light-emitting device is mounted with the p-type nitride semiconductor layer side down, so that light is emitted through a second major surface (1a) of the nitride semiconductor substrate which is opposite to the first major surface.
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公开(公告)号：EP1571716A4
公开(公告)日：2012-07-25
申请号：EP04771196
申请日：2004-08-04
Applicant: SUMITOMO ELECTRIC INDUSTRIES
Inventor： NAGAI YOUICHI , KIYAMA MAKOTO , NAKAMURA TAKAO , SAKURADA TAKASHI , AKITA KATSUSHI , UEMATSU KOJI , IKEDA AYAKO , KATAYAMA KOJI , YOSHIMOTO SUSUMU
IPC: H01L33/00 , H01L29/24 , H01L33/06 , H01L33/12 , H01L33/32 , H01L33/40 , H01L33/50 , H01L33/54 , H01L33/56 , H01L33/60 , H01L33/62
CPC classification number: H01L33/32 , H01L33/20 , H01L33/382 , H01L33/505 , H01L33/507 , H01L33/58 , H01L2224/05573 , H01L2224/16245 , H01L2224/32245 , H01L2224/45015 , H01L2224/45139 , H01L2224/45144 , H01L2224/48091 , H01L2224/48247 , H01L2224/48257 , H01L2224/73265 , H01L2224/8592 , H01L2924/00014 , H01L2924/3025 , H01L2924/00 , H01L2924/20752 , H01L2924/2076 , H01L2224/05599 , H01L2924/00011 , H01L2224/45099
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公开(公告)号：JP2003234388A
公开(公告)日：2003-08-22
申请号：JP2002033798
申请日：2002-02-12
Applicant: SUMITOMO ELECTRIC INDUSTRIES
Inventor： IKEDA AYAKO
Abstract: PROBLEM TO BE SOLVED: To provide a method of measuring impurity concentration in a substrate improved so that the three-dimensional distribution of impurity density can easily, inexpensively and nondistructively be measured by using a PL intensity measuring instrument capable of measuring an optional place inside of a substrate. SOLUTION: The substrate having a smooth surface is prepared. Laser beams are made to enter the substrate from the smooth surface. The light intensity of photoluminescence light emitted inside the substrate and detected at an upper part is obtained. The impurity concentration in the substrate is obtained from the light intensity of the photoluminescence light. COPYRIGHT: (C)2003,JPO
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