公开(公告)号：MY139560A

公开(公告)日：2009-10-30

申请号：MYPI0504086

申请日：1997-06-13

Applicant: SUMITOMO ELECTRIC INDUSTRIES

Inventor： YAMAGATA SHINICHI ,  ABE YUGAKU ,  IMAMURA MAKOTO ,  FUKUI AKIRA ,  TAKANO YOSHISHIGE ,  TAKIKAWA TAKATOSHI ,  HIROSE YOSHIYUKI

IPC: B22F3/24 ,  H01L23/15 ,  C22C1/05 ,  C22C1/10 ,  C22C21/00 ,  C22C32/00 ,  C25D17/16 ,  H01L21/48 ,  H01L23/14

Abstract: TO PROVIDE A SUBSTRATE MATERIAL MADE OF AN ALUMINUM/SILICON CARBIDE COMPOSITE ALLOY WHICH HAS A THERMAL CONDUCTIVITY OF 100 W/MXK OR HIGHER AND A THERMAL EXPANSION COEFFICIENT OF 20X10-SIGMA/°C OR LOWER AND IS LIGHTWEIGHT AND COMPOSITIONALLY HOMOGENEOUS. A SUBSTRATE MATERIAL MADE OF AN ALUMINUM/SILICON CARBIDE COMPOSITE ALLY WHICH COMPRISES AL-SIC ALLOY COMPOSITION PARTS AND NON ALLOY COMPOSITIONPART AND DISPERSED THEREIN FROM 10 TO 70 BY WEIGHT SILICON CARBIDE PARTICLES, AND IN WHICH THE FLUCTUATIONS OF SILICON CARBIDE CONCENTRATION IN THE AL-SIC ALLOY COMPOSITION PARTS THEREIN ARE WITHIN 1BY WEIGHT. THE SUBSTRATE MATERIAL IS PRODUCED BY SINTERING A COMPACT OF AN ALUMINUM/SILICON CARBIDE STARTING POWDER AT A TEMPERATURE NOT LOWER THAN 600°C IN A NON-OXIDIZING ATMOSPHERE.

公开(公告)号：DE69734419D1

公开(公告)日：2005-12-01

申请号：DE69734419

申请日：1997-06-13

Applicant: SUMITOMO ELECTRIC INDUSTRIES

Inventor： YAMAGATA SHINICHI ,  ABE YUGAKU ,  IMAMURA MAKOTO ,  FUKUI AKIRA ,  TAKANO YOSHISHIGE ,  TAKIKAWA TAKATOSHI ,  HIROSE YOSHIYUKI

IPC: B22F3/24 ,  C22C1/05 ,  C22C1/10 ,  C22C21/00 ,  C22C32/00 ,  C25D17/16 ,  H01L21/48 ,  H01L23/14 ,  H01L23/15

Abstract: To provide a substrate material made of an aluminum/silicon carbide composite alloy which has a thermal conductivity of 100 W/mxK or higher and a thermal expansion coefficient of 20x10 / DEG C or lower and is lightweight and compositionally homogeneous. A substrate material made of an aluminum/silicon carbide composite ally which comprises Al-SiC alloy composition parts and non alloy composition part and dispersed therein from 10 to 70% by weight silicon carbide particles, and in which the fluctuations of silicon carbide concentration in the Al-SiC alloy composition parts therein are within 1% by weight. The substrate material is produced by sintering a compact of an aluminum/silicon carbide starting powder at a temperature not lower than 600 DEG C in a non-oxidizing atmosphere.

公开(公告)号：SG63717A1

公开(公告)日：1999-03-30

申请号：SG1997002057

申请日：1997-06-13

Applicant: SUMITOMO ELECTRIC INDUSTRIES

Inventor： YAMAGATA SHINICHI ,  ABE YUGAKU ,  IMAMURA MAKOTO ,  FUKUI AKIRA ,  TAKANO YOSHISHIGE ,  TAKIKAWA TAKATOSHI ,  HIROSE YOSHIYUKI

IPC: B22F3/24 ,  C22C1/05 ,  C22C1/10 ,  C22C21/00 ,  C22C32/00 ,  C25D17/16 ,  H01L21/48 ,  H01L23/14 ,  H01L23/15 ,  C22C21/04 ,  C23C28/00

Abstract: To provide a substrate material made of an aluminum/silicon carbide composite alloy which has a thermal conductivity of 100 W/mxK or higher and a thermal expansion coefficient of 20x10 / DEG C or lower and is lightweight and compositionally homogeneous. A substrate material made of an aluminum/silicon carbide composite ally which comprises Al-SiC alloy composition parts and non alloy composition part and dispersed therein from 10 to 70% by weight silicon carbide particles, and in which the fluctuations of silicon carbide concentration in the Al-SiC alloy composition parts therein are within 1% by weight. The substrate material is produced by sintering a compact of an aluminum/silicon carbide starting powder at a temperature not lower than 600 DEG C in a non-oxidizing atmosphere.

公开(公告)号：MY127592A

公开(公告)日：2006-12-29

申请号：MYPI0404901

申请日：1997-06-13

Applicant: SUMITOMO ELECTRIC INDUSTRIES

Inventor： YAMAGATA SHINICHI ,  ABE YUGAKU ,  IMAMURA MAKOTO ,  FUKUI AKIRA ,  TAKANO YOSHISHIGE ,  TAKIKAWA TAKATOSHI ,  HIROSE YOSHIYUKI

IPC: B22F3/24 ,  B32B9/06 ,  C22C1/05 ,  C22C1/10 ,  C22C21/00 ,  C22C32/00 ,  C25D17/16 ,  H01L21/48 ,  H01L23/14 ,  H01L23/15

Abstract: TO PROVIDE A SUBSTRATE MATERIAL MADE OF AN ALUMINUM/SILICON CARBIDE COMPOSITE ALLOY WHICH HAS A THERMAL CONDUCTIVITY OF 100 W/M X K OR HIGHER AND A THERMAL EXPANSION COEFFICIENT OF 20X10ˉ⁶/°C OR LOWER AND IS LIGHTWEIGHT AND COMPOSITIONALLY HOMOGENEOUS. A SUBSTRATE MATERIAL MADE OF AN ALUMINUM/SILICON CARBIDE COMPOSITE ALLY WHICH COMPRISES AL-SIC ALLOY COMPOSITION PARTS AND NON ALLOY COMPOSITION PART AND DISPERSED THEREIN FROM 10 TO 70% B Y WEIGHT SILICON CARBIDE PARTICLES, AND IN WHICH THE FLUCTUATIONS OF SILICON CARBIDE CONCENTRATION IN THE AL-SIC ALLOY COMPOSITION PARTS THEREIN ARE WITHIN 1% BY WEIGHT. THE SUBSTRATE MATERIAL IS PRODUCED BY SINTERING A COMPACT OF AN ALUMINUM/SILICON CARBIDE STARTING POWDER AT A TEMPERATURE NOT LOWER THAN 600°C IN A NON-OXIDIZING ATMOSPHERE.(FIG.3)

公开(公告)号：DE69734419T2

公开(公告)日：2006-04-27

申请号：DE69734419

申请日：1997-06-13

Applicant: SUMITOMO ELECTRIC INDUSTRIES

Inventor： YAMAGATA SHINICHI ,  ABE YUGAKU ,  IMAMURA MAKOTO ,  FUKUI AKIRA ,  TAKANO YOSHISHIGE ,  TAKIKAWA TAKATOSHI ,  HIROSE YOSHIYUKI

IPC: B22F3/24 ,  H01L23/15 ,  C22C1/05 ,  C22C1/10 ,  C22C21/00 ,  C22C32/00 ,  C25D17/16 ,  H01L21/48 ,  H01L23/14

Abstract: To provide a substrate material made of an aluminum/silicon carbide composite alloy which has a thermal conductivity of 100 W/mxK or higher and a thermal expansion coefficient of 20x10 / DEG C or lower and is lightweight and compositionally homogeneous. A substrate material made of an aluminum/silicon carbide composite ally which comprises Al-SiC alloy composition parts and non alloy composition part and dispersed therein from 10 to 70% by weight silicon carbide particles, and in which the fluctuations of silicon carbide concentration in the Al-SiC alloy composition parts therein are within 1% by weight. The substrate material is produced by sintering a compact of an aluminum/silicon carbide starting powder at a temperature not lower than 600 DEG C in a non-oxidizing atmosphere.

公开(公告)号：AU2002349516A1

公开(公告)日：2003-09-04

申请号：AU2002349516

申请日：2002-12-09

Applicant: SUMITOMO ELECTRIC INDUSTRIES

Inventor： SASAME AKIRA ,  TSUZUKI YASUSHI ,  IMAMURA MAKOTO ,  ISHII TAKASHI ,  AMOH TERUO ,  HIGAKI KENJIRO

IPC: H01L21/52 ,  H01L23/492 ,  H01S5/022 ,  H01S5/323

Abstract: A sub-mount enabling solder from climbing the edge of a semiconductor laser device and a semiconductor device are disclosed. A sub-mount for mounting a semiconductor device 2 thereon comprising a sub-mount substrate 4 and a solder film 8 formed on the sub-mount substrate 4, wherein the width WS microm and thickness d microm of the solder film are determined so that the following conditions may be satisfied. 0. 3

公开(公告)号：MY125699A

公开(公告)日：2006-08-30

申请号：MYPI9702649

申请日：1997-06-13

Applicant: SUMITOMO ELECTRIC INDUSTRIES

Inventor： YAMAGATA SHINICHI ,  ABE YUGAKU ,  IMAMURA MAKOTO ,  FUKUI AKIRA ,  TAKANO YOSHISHIGE ,  TAKIKAWA TAKATOSHI ,  HIROSE YOSHIYUKI

IPC: B22F3/24 ,  H01L23/15 ,  C22C1/05 ,  C22C1/10 ,  C22C21/00 ,  C22C32/00 ,  C25D17/16 ,  H01L21/48 ,  H01L23/14

Abstract: TO PROVIDE A SUBSTRATE MATERIAL MADE OF AN ALUMINUM/SILICON CARBIDE COMPOSITE ALLOY WHICH HAS A THERMAL CONDUCTIVITY OF 100 W/M X K OR HIGHER AND A THERMAL EXPANSION COEFFICIENT OF 20 X 10ˉ⁶ / °C OR LOWER AND IS LIGHTWEIGHT AND COMPOSITIONALLY HOMOGENEOUS. A SUBSTRATE MATERIAL MADE OF AN ALUMINUM/SILICON CARBIDE COMPOSITE ALLY WHICH COMPRISES A1-SIC ALLOY COMPOSITION PARTS AND NON ALLOY COMPOSITION PART AND DISPERSED THEREIN FROM 10 TO 70% BY WEIGHT SILICON CARBIDE PARTICLES, AND IN WHICH THE FLUCTUATIONS OF SILICON CARBIDE CONCENTRATION IN THE A1-SIC ALLOY COMPOSITION PARTS THEREIN ARE WITHIN 1% BY WEIGHT. THE SUBSTRATE MATERIAL IS PRODUCED BY SINTERING A COMPACT OF AN ALUMINUM/SILICON CARBIDE STARTING POWDER AT A TEMPERATURE NOT LOWER THAN 600 °C IN A NON-OXIDIZING ATMOSPHERE. (FIG. 2)

公开(公告)号：EP0813243A3

公开(公告)日：1998-12-02

申请号：EP97109681

申请日：1997-06-13

Applicant: SUMITOMO ELECTRIC INDUSTRIES

Inventor： YAMAGATA SHINICHI ,  ABE YUGAKU ,  IMAMURA MAKOTO ,  FUKUI AKIRA ,  TAKANO YOSHISHIGE ,  TAKIKAWA TAKATOSHI ,  HIROSE YOSHIYUKI

IPC: B22F3/24 ,  C22C1/05 ,  C22C1/10 ,  C22C21/00 ,  C22C32/00 ,  C25D17/16 ,  H01L21/48 ,  H01L23/14 ,  H01L23/15

CPC classification number: C22C32/0063 ,  H01L21/4807 ,  H01L23/15 ,  H01L24/48 ,  H01L2224/16 ,  H01L2224/16225 ,  H01L2224/32188 ,  H01L2224/32225 ,  H01L2224/32245 ,  H01L2224/48091 ,  H01L2224/48247 ,  H01L2224/73204 ,  H01L2224/73253 ,  H01L2224/73265 ,  H01L2924/00014 ,  H01L2924/01012 ,  H01L2924/01019 ,  H01L2924/01046 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01322 ,  H01L2924/09701 ,  H01L2924/12042 ,  H01L2924/15153 ,  H01L2924/15165 ,  H01L2924/1517 ,  H01L2924/15311 ,  H01L2924/15312 ,  H01L2924/1532 ,  H01L2924/16152 ,  H01L2924/16195 ,  H01L2924/181 ,  Y10T428/24975 ,  Y10T428/25 ,  Y10T428/252 ,  Y10T428/26 ,  Y10T428/31678 ,  H01L2924/00 ,  H01L2224/45015 ,  H01L2924/207 ,  H01L2224/45099 ,  H01L2224/05599 ,  H01L2224/85399

Abstract: To provide a substrate material made of an aluminum/silicon carbide composite alloy which has a thermal conductivity of 100 W/mxK or higher and a thermal expansion coefficient of 20x10 / DEG C or lower and is lightweight and compositionally homogeneous. A substrate material made of an aluminum/silicon carbide composite ally which comprises Al-SiC alloy composition parts and non alloy composition part and dispersed therein from 10 to 70% by weight silicon carbide particles, and in which the fluctuations of silicon carbide concentration in the Al-SiC alloy composition parts therein are within 1% by weight. The substrate material is produced by sintering a compact of an aluminum/silicon carbide starting powder at a temperature not lower than 600 DEG C in a non-oxidizing atmosphere.

Abstract translation: 提供一种由铝/碳化硅复合合金制成的基板材料，其具有100W / m×K以上的热导率和20×10 -6 /℃以下的热膨胀系数，重量轻且组成均匀。 由铝/碳化硅复合材料制成的基体材料，其包含Al-SiC合金组合物部件和非合金组成部分，并且其中分散有10至70重量％的碳化硅颗粒，并且其中碳化硅浓度的波动 其中的Al-SiC合金组成部分在1重量％以内。 基板材料通过在非氧化性气氛中在不低于600℃的温度下烧结铝/碳化硅起始粉末的压块来制造。

公开(公告)号：JPH10335538A

公开(公告)日：1998-12-18

申请号：JP13616497

申请日：1997-05-09

Applicant: SUMITOMO ELECTRIC INDUSTRIES

Inventor： YAMAGATA SHINICHI ,  KOUNO YOSHIE ,  TAKIGAWA TAKATOSHI ,  HIROSE YOSHIYUKI ,  FUKUI AKIRA ,  ABE YUUGAKU ,  IMAMURA MAKOTO

IPC: B22F3/24 ,  C22C1/05 ,  C22C1/10 ,  C22C21/00 ,  C22C32/00 ,  C25D17/16 ,  H01L21/48 ,  H01L23/14 ,  H01L23/15

Abstract: PROBLEM TO BE SOLVED: To provide the semiconductor substrate material, having the thermal conductivity of 100 W/mK or higher and the thermal expansion coefficient of 20×10 / deg.C or lower and consisting of Al-SiC composite alloy of light weight and uniform composition, the semiconductor substrate, and semiconductor device using the above-mentioned material, and to provide the manufacturing method of the above-mentioned material, semiconductor substrate and device. SOLUTION: This semiconductor substrate material is composed of an Al-SiC composite alloy which is manufactured by a sintering method, the SiC of 10 to 70 wt.%, which is dispersed in particle-like form, is present in Al or Al alloy, and the difference of SiC quantity in Al-SiC alloy composition should be within 1 wt.%. This semiconductor substrate material is used as the semiconductor substrate of a semiconductor device in the state as it is or by providing the surface treatment such as Al coating layer, etc., on the surface.

公开(公告)号：JP2002359427A

公开(公告)日：2002-12-13

申请号：JP2002040643

申请日：2002-02-18

Applicant: SUMITOMO ELECTRIC INDUSTRIES

Inventor： IMAMURA MAKOTO ,  ISHII TAKASHI ,  AMO AKIO ,  HIGAKI KENJIRO ,  SASAME AKIRA ,  CHIKUGI YASUSHI

IPC: H01L21/52 ,  H01L23/492 ,  H01S5/022 ,  H01S5/323

Abstract: PROBLEM TO BE SOLVED: To provide a submount and a semiconductor device, capable of preventing solder from creeping up on the edge face of a semiconductor laser element. SOLUTION: This submount, on which a semiconductor element 2 is mounted, is provided with a submount substrate 4 and a solder film 8 formed on the submount substrate. When the width of the solder film is WS (μm) and the width of the semiconductor element to be mounted on the solder film is WC (μm), the width WS and thickness d (μm) of the solder film are decided with an evaluation value W (μm) specified by the formula 2W=(WC-WS) and a thickness d (μm) of the solder film so as to satisfy the relations 0.3