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    Valve-open-close mechanism
    1.
    发明授权
    Valve-open-close mechanism 失效
    阀门开闭机构

    公开(公告)号：US6371063B2

    公开(公告)日：2002-04-16

    申请号：US73181800

    申请日：2000-12-08

    Applicant: SUMITOMO ELECTRIC INDUSTRIES

    Inventor： OYAMA HITOSHI ,  NISHIOKA TAKAO ,  MATSUNUMA KENJI ,  TAKIKAWA TAKATOSHI ,  KAJI TOSHIHIKO ,  KAWABE NOZOMU ,  SOGABE KOUICHI

    IPC: C22C38/00 ,  C22C38/24 ,  F01L1/46 ,  F01L3/02 ,  F01L3/10 ,  F01L9/04 ,  F16F1/12

    CPC classification number: F01L3/02 ,  F01L1/462 ,  F01L3/10 ,  F01L9/04 ,  Y10S977/725 ,  Y10S977/777

    Abstract: It is proposed to lessen the weight and improve the mechanical strength of a retainer of a valve open-close mechanism driven by an electromagnetic actuator used in an automotive internal combustion engine. The electromagnetic actuator is mounted in a housing mounted on an internal combustion engine body. A first stem has its tip abutting the valve, which is provided with a retainer and carries a first coil spring. A second stem is provided on the other side of an armature. The second stem has a retainer. Between this retainer and the housing, a second coil spring is mounted. At least one of these parts is made of a metal smaller in specific weight than iron or its alloy. Each retainer has a boss and an arcuate corner portion having a radius of curvature R of 1.0 mm or over between a spring abutting surface and the boss to relieve stress concentration.

    Abstract translation: 建议减轻由汽车内燃机中使用的电磁致动器驱动的阀开闭机构的保持器的重量和机械强度。 电磁致动器安装在安装在内燃机主体上的壳体中。 第一杆具有其尖端邻接阀，其具有保持器并且承载第一螺旋弹簧。 在衔铁的另一侧设置有第二杆。 第二杆具有保持架。 在该保持器和壳体之间，安装有第二螺旋弹簧。 这些部件中的至少一个由铁或其合金的比重小的金属制成。 每个保持器具有凸起和弓形角部，其在弹簧抵接表面和凸起之间具有1.0mm或更大的曲率半径R，以减轻应力集中。

    WIRING BOARD
    3.
    发明专利
    WIRING BOARD 未知

    公开(公告)号：CA2080814C

    公开(公告)日：1997-11-25

    申请号：CA2080814

    申请日：1992-02-24

    Applicant: SUMITOMO ELECTRIC INDUSTRIES

    Inventor： YAMANAKA SHOSAKU ,  MAEDA TAKAO ,  HARADA KEIZO ,  TAKIKAWA TAKATOSHI ,  BAN SHUNSUKE

    IPC: H01L23/14 ,  H01L23/495 ,  H01L23/498 ,  H05K1/05 ,  H01L23/12 ,  H01L21/58 ,  H01L21/60 ,  H01L27/12

    Abstract: A wiring board having a wiring circuit which is reliable and which can be easily miniaturized, which is used for the production of a highly integrated, lighter, thinner, shorter, smaller and low-cost semiconductor device. This wiring board can be sealed in a plastic package. It comprises a metal plate (1) and a thin-film dielectric layer (2) formed on the surface of the metal plate. A semiconductor device (8) is mounted on the surface of the dielectric layer (2) or the exposed surface of the metal plate (1). Film wirings (3), (4) and (5) are formed on the dielectric layer (2). Each film wiring is in the form of a laminate formed by laminating, by vapor phase deposition or by plating, an aluminum conductive layer, an adhesive layer of chromium, titanium or a laminate thereof, a diffusion barrier layer of nickel, copper or a laminate thereof, and a corrosion-preventive and wire bonding layer of gold. Such wirings may be in the form of a laminate formed by laminating an adhesive layer of chromium, aluminum, titanium or a laminate comprising at least two of them, a copper conductive layer, and a gold layer or a laminate formed by laminating an aluminum conductive layer, a barrier layer of nickel, and a gold layer. Since the film wirings can be miniaturized easily, the density of wirings can be increased. Also, since the wirings are made of aluminum or copper, they are cheap.

    4.
    发明专利
    未知

    公开(公告)号：DE69734419D1

    公开(公告)日：2005-12-01

    申请号：DE69734419

    申请日：1997-06-13

    Applicant: SUMITOMO ELECTRIC INDUSTRIES

    Inventor： YAMAGATA SHINICHI ,  ABE YUGAKU ,  IMAMURA MAKOTO ,  FUKUI AKIRA ,  TAKANO YOSHISHIGE ,  TAKIKAWA TAKATOSHI ,  HIROSE YOSHIYUKI

    IPC: B22F3/24 ,  C22C1/05 ,  C22C1/10 ,  C22C21/00 ,  C22C32/00 ,  C25D17/16 ,  H01L21/48 ,  H01L23/14 ,  H01L23/15

    Abstract: To provide a substrate material made of an aluminum/silicon carbide composite alloy which has a thermal conductivity of 100 W/mxK or higher and a thermal expansion coefficient of 20x10 / DEG C or lower and is lightweight and compositionally homogeneous. A substrate material made of an aluminum/silicon carbide composite ally which comprises Al-SiC alloy composition parts and non alloy composition part and dispersed therein from 10 to 70% by weight silicon carbide particles, and in which the fluctuations of silicon carbide concentration in the Al-SiC alloy composition parts therein are within 1% by weight. The substrate material is produced by sintering a compact of an aluminum/silicon carbide starting powder at a temperature not lower than 600 DEG C in a non-oxidizing atmosphere.

    5.
    发明专利
    未知

    公开(公告)号：DE69207285D1

    公开(公告)日：1996-02-15

    申请号：DE69207285

    申请日：1992-06-29

    Applicant: SUMITOMO ELECTRIC INDUSTRIES

    Inventor： HARADA KEIZO ,  TAKIKAWA TAKATOSHI ,  MAEDA TAKAO ,  BAN SHUNSUKE ,  YAMANAKA SHOSAKU

    IPC: H01L23/12 ,  H01L21/48 ,  H01L23/14 ,  H01L23/495 ,  H05K1/05 ,  C23C16/22

    Abstract: A plastic package type semiconductor device is composed of a rolled metal substrate (1) made of copper or copper alloy and an insulating film (2) formed on the surface of the substrate. The film may be a single-layer film made of silicon oxynitride or a composite film formed by laminating a silicon oxide layer and a silicon oxynitride layer (or a silicon nitride layer). A semiconductor element (8) is mounted on the film or on the exposed surface of the substrate. Other passive elements (3) are provided on the film. After connecting these elements with bonding wires, the entire device is sealed in a resin molding (13). This device is thus free of cracks due to difference in thermal expansion between the film and the substrate, or peeling due to moisture absorption.

    SEMICONDUCTOR DEVICE
    6.
    发明专利
    SEMICONDUCTOR DEVICE 未知

    公开(公告)号：CA2065124A1

    公开(公告)日：1993-10-04

    申请号：CA2065124

    申请日：1992-04-03

    Applicant: SUMITOMO ELECTRIC INDUSTRIES

    Inventor： TAKIKAWA TAKATOSHI ,  YAMANAKA SHOSAKU

    IPC: H01L23/485 ,  H01L23/498 ,  H01L23/50

    Abstract: A semiconductor device has a semiconductor element having a large number of pads. A wiring board is provided on the top surface thereof with a large number of radially extending wiring patterns. The semiconductor element is mounted centrally on the top surface of the wiring board. A lead frame is secured to the outer edge of the wiring board and electrically connected to the wiring patterns. An anisotropic conductive film is provided between the wiring board and the lead frame or between the wiring board and input/output terminals of the semiconductor element to provide electrical connection therebetween. Also, the wiring patterns on the wiring board may be bonded directly to inner ends of the lead frame by hot pressing or by solder.

    ADVANCE MULTILAYER MOLDED PLASTIC PACKAGE USING MESIC TECHNOLOGY
    7.
    发明专利
    ADVANCE MULTILAYER MOLDED PLASTIC PACKAGE USING MESIC TECHNOLOGY 未知

    公开(公告)号：CA2108542A1

    公开(公告)日：1993-08-19

    申请号：CA2108542

    申请日：1993-02-18

    Applicant: SUMITOMO ELECTRIC INDUSTRIES ,  INTEL CORP

    Inventor： YAMANAKA SHOSAKU ,  TAKIKAWA TAKATOSHI ,  MALLIK DEBENDRA ,  BAN SYUNSUKE ,  BHATTACHARYYA BIDYUT K

    IPC: C23C14/06 ,  C23C14/14 ,  H01L23/485 ,  H01L23/495 ,  H01L23/50 ,  H01L23/64 ,  H01L23/02 ,  H01L21/84 ,  H01L23/66 ,  H01L29/44 ,  H01L29/48 ,  H01L29/60

    Abstract: A method and resulting structure for constructing an IC package. The package has a bottom conductive plate that has a layer of insulative material thereupon in a predetermined pattern. Adjacent to the insulative layer is a layer of conductive metal thereupon. The layer of metal can be laid down onto the insulative layer in a predetermined pattern to create a power plane, a plurality of signal lines, or a combination of power planes and signal lines. On top of the layer of conductive material is a lead frame which may be separated by a second layer of insulative material. The second layer of insulative material has a plurality of holes filled with a conductive material, which electrically couple the layer of conductive material with the leads of the lead frame. The power and ground pads of the integrated circuit are connected to the layer of conductive material and conductive plate, which are also coupled to the corresponding leads of the lead frame, thereby connecting the IC to the leads of the lead frame. The signal pads of the IC are connected to the lead frame and/or signal lines formed within the layer of conductive material. The IC and attached circuit package can then be encapsulated in a plastic shell.

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