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公开(公告)号:DE69532541D1
公开(公告)日:2004-03-11
申请号:DE69532541
申请日:1995-11-29
Applicant: SUMITOMO ELECTRIC INDUSTRIES
Inventor: KANADA YASUYUKI , MIZUSUNA HIROHUMI , NAKAMURA TSUTOMU , NAKAI TETSUO
Abstract: A method of manufacturing a diamond sintered body includes the steps of preparing diamond powder having particle size within a range of 0.1 to 10 mu m, coating the surface of each particle of the diamond powder by a sintering assistant agent including Pd within a range of 0.01 to 40 percent by weight and at least one of an iron family metal as remaining part, and sintering the coated diamond powder in liquid-phase under high pressure and high temperature condition, so that a diamond sintering body having high strength and high wear-resistance containing diamond particles of 80 to 96 percent by volume can be obtained.
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公开(公告)号:DE69232133T2
公开(公告)日:2002-03-21
申请号:DE69232133
申请日:1992-11-04
Applicant: SUMITOMO ELECTRIC INDUSTRIES
Inventor: NAKAMURA TSUTOMU , KANADA YASUYUKI , NAKAI TETSUO
Abstract: A polycrystalline diamond cutting tool comprises a tool material (3) of polycrystalline diamond formed by low-pressure vapor deposition, which is bonded to a shank (4) of cemented carbide through a brazing layer (5). The thickness of the polycrystalline diamond layer (3) is set at 0.1 to 1.0 mm, while that of the brazing layer (5) is set at 10 to 50 m. The brazing layer (5) is made of a material having a melting point of 950 to 1300 DEG C, which is in the form of an alloy layer containing at least one material selected from metals belonging to the groups IVa, Va, VIa and VIIa of the periodic table and carbides thereof and at least one material selected from Au, Ag, Cu, Pt, Pd and Ni. The polycrystalline diamond cutting tool is improved in heat resistance and tool strength. In order to improve deposition resistance of the cutting tool, the surface roughness of a tool rake face (10) is set to be not more than 0.2 m in Rmax. A portion of the polycrystalline diamond layer (3) up to a depth of 10 m from the rake face (10) contains 99 to 100 atomic percent of carbon elements, and 99 to 100 % of carbon atoms are diamond-bonded. A surface of the polycrystalline diamond layer which has been in contact with the substrate during formation of the polycrystalline diamond layer defines the rake face (10), whose surface is subjected to ion beam machining and thereafter treated in the atmosphere at a temperature of 300 to 500 DEG C.
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公开(公告)号:DE69232133D1
公开(公告)日:2001-11-22
申请号:DE69232133
申请日:1992-11-04
Applicant: SUMITOMO ELECTRIC INDUSTRIES
Inventor: NAKAMURA TSUTOMU , KANADA YASUYUKI , NAKAI TETSUO
Abstract: A polycrystalline diamond cutting tool comprises a tool material (3) of polycrystalline diamond formed by low-pressure vapor deposition, which is bonded to a shank (4) of cemented carbide through a brazing layer (5). The thickness of the polycrystalline diamond layer (3) is set at 0.1 to 1.0 mm, while that of the brazing layer (5) is set at 10 to 50 m. The brazing layer (5) is made of a material having a melting point of 950 to 1300 DEG C, which is in the form of an alloy layer containing at least one material selected from metals belonging to the groups IVa, Va, VIa and VIIa of the periodic table and carbides thereof and at least one material selected from Au, Ag, Cu, Pt, Pd and Ni. The polycrystalline diamond cutting tool is improved in heat resistance and tool strength. In order to improve deposition resistance of the cutting tool, the surface roughness of a tool rake face (10) is set to be not more than 0.2 m in Rmax. A portion of the polycrystalline diamond layer (3) up to a depth of 10 m from the rake face (10) contains 99 to 100 atomic percent of carbon elements, and 99 to 100 % of carbon atoms are diamond-bonded. A surface of the polycrystalline diamond layer which has been in contact with the substrate during formation of the polycrystalline diamond layer defines the rake face (10), whose surface is subjected to ion beam machining and thereafter treated in the atmosphere at a temperature of 300 to 500 DEG C.
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公开(公告)号:DE69228104T2
公开(公告)日:1999-05-20
申请号:DE69228104
申请日:1992-10-20
Applicant: SUMITOMO ELECTRIC INDUSTRIES
Inventor: IGUCHI TAKAHISA , NAKAMURA TSUTOMU , NAKAI TETSUO
IPC: H01L21/48 , H01L23/373
Abstract: A polycrystalline diamond is prepared by chemical vapor deposition (step 101). A surface of the polycrystalline substance are metallized (step 102). The metallized surface of the polycrystalline diamond is grooved with a YAG laser (step 103). A wedge or the like is driven into the grooves of the polycrystalline diamond to pressurize the same, whereby the polycrystalline diamond is divided along the grooves (step 104). Alternatively, a surface of a polycrystalline diamond prepared by chemical vapor deposition may be grooved with a YAG laser (step 112), so that the surface of the polycrystalline diamond is thereafter metallized (step 113). A diamond heat sink (10) includes a first layer (11a) grooved with a laser and a mechanically divided second layer (11b). Graphite adheres to the surface of the first layer (11a). The second layer (11b) is greater in surface roughness than the first layer (11a).
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公开(公告)号:ZA9510177B
公开(公告)日:1996-06-01
申请号:ZA9510177
申请日:1995-11-30
Applicant: SUMITOMO ELECTRIC INDUSTRIES
Inventor: KANADA YASUYUKI , MIZUSUNA HIROHUMI , NAKAMURA TSUTOMU , NAKAI TETSUO
Abstract: A method of manufacturing a diamond sintered body includes the steps of preparing diamond powder having particle size within a range of 0.1 to 10 mu m, coating the surface of each particle of the diamond powder by a sintering assistant agent including Pd within a range of 0.01 to 40 percent by weight and at least one of an iron family metal as remaining part, and sintering the coated diamond powder in liquid-phase under high pressure and high temperature condition, so that a diamond sintering body having high strength and high wear-resistance containing diamond particles of 80 to 96 percent by volume can be obtained.
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公开(公告)号:ZA952640B
公开(公告)日:1996-03-25
申请号:ZA952640
申请日:1995-03-30
Applicant: SUMITOMO ELECTRIC INDUSTRIES
Inventor: NAKAMURA TSUTOMU , KAWAUCHI HIROSHI , NAKAI TETSUO
IPC: C04B41/89 , C30B29/04 , H01L20060101 , H01L21/60 , H01L21/603 , H01L
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公开(公告)号:DE69107766T2
公开(公告)日:1995-06-29
申请号:DE69107766
申请日:1991-10-08
Applicant: SUMITOMO ELECTRIC INDUSTRIES
Inventor: NAKAMURA TSUTOMU , NAKAI TETSUO
Abstract: A polycrystalline diamond cutting tool is prepared by employing polycrystalline diamond, which is synthesized on a mirror-finished surface of a base material by a low-pressure vapor phase method, as a tool material. A surface, which has been in contact with the base material, of the polycrystalline diamond layer is utilized as a tool rake face. A flank of the tool is formed by laser processing. The flank is covered with a graphite coating layer in one embodiment, while such a graphite coating layer is removed by acid treatment or the like in another embodiment. In still another embodiment, a flank is formed by grinding, and a cutting edge portion is honed by laser processing.
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公开(公告)号:DE69018220D1
公开(公告)日:1995-05-04
申请号:DE69018220
申请日:1990-08-23
Applicant: SUMITOMO ELECTRIC INDUSTRIES
Inventor: NAKAMURA TSUTOMU , TANAKA KATSUYUKI , NAKAI TETSUO , IMAI TAKAHIRO , IKEGAYA AKIHIKO , FUJIMORI NAOJI
Abstract: A bonding tool for TAB, used in the production of semiconductor chips, which is provided with, at the end thereof, a substrate (3) consisting of a member selected from the group consisting of sintered compacts of Si or Si3N4 as a predominant component, sintered compacts of SiC as a predominant component, sintered compacts of AlN as a predominant component and composite compacts thereof, the substrate being coated with polycrystalline diamond (7) deposited by gaseous phase synthesis method.
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公开(公告)号:DE69107766D1
公开(公告)日:1995-04-06
申请号:DE69107766
申请日:1991-10-08
Applicant: SUMITOMO ELECTRIC INDUSTRIES
Inventor: NAKAMURA TSUTOMU , NAKAI TETSUO
Abstract: A polycrystalline diamond cutting tool is prepared by employing polycrystalline diamond, which is synthesized on a mirror-finished surface of a base material by a low-pressure vapor phase method, as a tool material. A surface, which has been in contact with the base material, of the polycrystalline diamond layer is utilized as a tool rake face. A flank of the tool is formed by laser processing. The flank is covered with a graphite coating layer in one embodiment, while such a graphite coating layer is removed by acid treatment or the like in another embodiment. In still another embodiment, a flank is formed by grinding, and a cutting edge portion is honed by laser processing.
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公开(公告)号:ZA9108032B
公开(公告)日:1992-06-24
申请号:ZA9108032
申请日:1991-10-08
Applicant: SUMITOMO ELECTRIC INDUSTRIES
Inventor: NAKAMURA TSUTOMU , TSUTOMU NAKAMURA , NAKAI TETSUO , TETSUO NAKAI
IPC: B23B27/14 , B23B27/20 , B23K20060101 , B23K26/00 , B23P15/28 , C23C16/26 , C23C16/27 , C30B20060101 , B23K , C30B
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