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1.发明公开AlxGayIn1-x-yN CRYSTAL SUBSTRATE, SEMICONDUCTOR DEVICE, AND METHOD FOR MANUFACTURING THE SAME 审中-公开ALXGAYIN1-X-YN-CRYSTAL基板，半导体装置及其制造方法
公开(公告)号：EP1970946A4
公开(公告)日：2011-09-07
申请号：EP06811820
申请日：2006-10-16
Applicant: SUMITOMO ELECTRIC INDUSTRIES
Inventor： FUJIWARA SHINSUKE , UEMURA TOMOKI , OKAHISA TAKUJI , UEMATSU KOJI , OKUI MANABU , NISHIOKA MUNEYUKI , HASHIMOTO SHIN
IPC: H01L21/20 , C30B29/38 , H01L29/201 , H01L33/00 , H01L33/32
CPC classification number: H01L21/02658 , C30B25/02 , C30B29/403 , H01L21/02389 , H01L21/0254
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