公开(公告)号：DE102005055421B4

公开(公告)日：2008-07-17

申请号：DE102005055421

申请日：2005-11-21

Applicant: SUMITOMO ELECTRIC INDUSTRIES

Inventor： SHIOZAKI MANABU ,  FUSE KEIJI ,  WATATANI KENICHI

IPC: B23K26/40 ,  B29C65/16 ,  G02B3/08 ,  G02B5/18 ,  G02B13/00 ,  G02B27/09 ,  H01S3/00

Abstract: Ultrashort pulse laser processing bores, welds or cuts objects (work pieces) by converging ultrashort laser pulses by a lens on the objects (work pieces) positioned at the focus and heating small spots or narrow lines on the objects (work pieces). Shortage of a focal depth of the lens prevents the ultrashort pulse laser processing from positioning the object (a work piece) and forming a deep, constant-diameter cylindrical hole. Z-parameter is defined to be Z=2fc&Dgr;t/&Dgr;i2, where &Dgr;t is a FWHM pulse width of the ultrashort pulse laser, &Dgr;i is a FWHM beam diameter of the ultrashort pulse, f is a focal length of the lens and c is the light velocity in vacuum. Selection of an optical system including a diffraction-type lens which gives the Z-parameter less than 1 (Z

公开(公告)号：DE102005055421A1

公开(公告)日：2006-05-24

申请号：DE102005055421

申请日：2005-11-21

Applicant: SUMITOMO ELECTRIC INDUSTRIES

Inventor： SHIOZAKI MANABU ,  FUSE KEIJI ,  WATATANI KENICHI

IPC: B23K26/40 ,  B29C65/16 ,  G02B3/08 ,  G02B5/18 ,  G02B13/00 ,  G02B27/09 ,  H01S3/00

Abstract: Ultrashort pulse laser processing bores, welds or cuts objects (work pieces) by converging ultrashort laser pulses by a lens on the objects (work pieces) positioned at the focus and heating small spots or narrow lines on the objects (work pieces). Shortage of a focal depth of the lens prevents the ultrashort pulse laser processing from positioning the object (a work piece) and forming a deep, constant-diameter cylindrical hole. Z-parameter is defined to be Z=2fc&Dgr;t/&Dgr;i2, where &Dgr;t is a FWHM pulse width of the ultrashort pulse laser, &Dgr;i is a FWHM beam diameter of the ultrashort pulse, f is a focal length of the lens and c is the light velocity in vacuum. Selection of an optical system including a diffraction-type lens which gives the Z-parameter less than 1 (Z

公开(公告)号：GB2420306B

公开(公告)日：2010-02-03

申请号：GB0523099

申请日：2005-11-11

Applicant: SUMITOMO ELECTRIC INDUSTRIES

Inventor： SHIOZAKI MANABU ,  FUSE KEIJI ,  WATATANI KENICHI

IPC: B23K26/40 ,  B29C65/16 ,  G02B3/08 ,  G02B5/18 ,  G02B13/00 ,  H01S3/00

Abstract: Ultrashort pulse laser processing bores, welds or cuts objects (work pieces) by converging ultrashort laser pulses by a lens on the objects (work pieces) positioned at the focus and heating small spots or narrow lines on the objects (work pieces). Shortage of a focal depth of the lens prevents the ultrashort pulse laser processing from positioning the object (a work piece) and forming a deep, constant-diameter cylindrical hole. Z-parameter is defined to be Z=2fc&Dgr;t/&Dgr;i2, where &Dgr;t is a FWHM pulse width of the ultrashort pulse laser, &Dgr;i is a FWHM beam diameter of the ultrashort pulse, f is a focal length of the lens and c is the light velocity in vacuum. Selection of an optical system including a diffraction-type lens which gives the Z-parameter less than 1 (Z

公开(公告)号：CA2598056A1

公开(公告)日：2006-09-08

申请号：CA2598056

申请日：2006-02-23

Applicant: SUMITOMO ELECTRIC INDUSTRIES

Inventor： SHIMIZU SEIJI ,  SAKABE SHUJI ,  WATATANI KENICHI ,  HASHIDA MASAKI ,  OKUDA YASUHIRO ,  MASUDA YASUHITO ,  MISHIMA HIDEHIKO

IPC: B23K26/40

Abstract: In order to easily control the laser pulse width and perform high-precision processing, the method for processing a material by laser ablation according to the present invention is characterized in that the material having a region of which a double logarithmic chart shows a linearly-shaped line with a gradient of not more than 0.5, when a relationship between laser pulse width and ablation threshold is represented in the logarithmic chart with a laser pulse width in picosecond plotted along the horizontal axis and an ablation threshold in J/cm 2 plotted along the vertical axis, is processed by the pulsed laser beam having the laser pulse width within the region.

公开(公告)号：ZA200903768B

公开(公告)日：2010-03-31

申请号：ZA200903768

申请日：2009-05-29

Applicant: SUMITOMO ELECTRIC INDUSTRIES ,  SUMITOMO ELEC HARDMETAL CORP

Inventor： WATATANI KENICHI ,  FUSE KEIJI ,  KOBAYASHI YUTAKA

IPC: G02B27/09 ,  B23K20100101 ,  B28D20100101 ,  G02B13/00 ,  G02B17/08

公开(公告)号：GB2420306A

公开(公告)日：2006-05-24

申请号：GB0523099

申请日：2005-11-11

Applicant: SUMITOMO ELECTRIC INDUSTRIES

Inventor： SHIOZAKI MANABU ,  FUSE KEIJI ,  WATATANI KENICHI

IPC: B23K26/40 ,  B29C65/16 ,  G02B3/08 ,  G02B5/18 ,  G02B13/00 ,  H01S3/00

Abstract: Ultrashort pulse laser processing bores, welds or cuts objects (work pieces) by converging ultrashort laser pulses by a lens on the objects (work pieces) positioned at the focus and heating small spots or narrow lines on the objects (work pieces). Shortage of a focal depth of the lens prevents the ultrashort pulse laser processing from positioning the object (a work piece) and forming a deep, constant-diameter cylindrical hole. Z-parameter is defined to be Z = 2fc Š t/ Š i , where Š t is a FWHM pulse width of the ultrashort pulse laser, Š i is a FWHM beam diameter of the ultrashort pulse, f is a focal length of the lens and c is the light velocity in vacuum. Selection of an optical system including a diffraction-type lens which gives the Z-parameter less than 1 (Z

公开(公告)号：EP3159918A4

公开(公告)日：2018-02-14

申请号：EP16817494

申请日：2016-02-05

Applicant: SUMITOMO ELECTRIC INDUSTRIES

Inventor： MIYANAGA MIKI ,  WATATANI KENICHI ,  AWATA HIDEAKI

IPC: H01L29/786 ,  C23C14/08 ,  C23C14/14 ,  C23C14/24 ,  C23C14/34 ,  C23C14/58 ,  C23C16/30 ,  C23C16/34 ,  C23C16/40 ,  C23C16/44 ,  C23C16/56 ,  H01L21/363 ,  H01L29/24 ,  H01L29/66

CPC classification number: H01L29/78618 ,  C23C14/08 ,  C23C14/14 ,  C23C14/24 ,  C23C14/34 ,  C23C14/58 ,  C23C14/5806 ,  C23C16/308 ,  C23C16/345 ,  C23C16/401 ,  C23C16/44 ,  C23C16/56 ,  H01L29/24 ,  H01L29/66969 ,  H01L29/7869 ,  H01L29/78696

Abstract: There is provided a semiconductor device including: a gate electrode (2); a channel layer (7) arranged in a region directly below or directly above the gate electrode (2); a source electrode (5) and a drain electrode (6) arranged to be in contact with the channel layer (7); and a first insulating layer (3) arranged between the gate electrode (2) and the channel layer (7), the channel layer (7) including a first oxide semiconductor, at least one of the source electrode (5) and the drain electrode (6) including a second oxide semiconductor, and the first oxide semiconductor and the second oxide semiconductor containing indium, tungsten and zinc. There is also provided a method for manufacturing the semiconductor device.

公开(公告)号：EP2980041A4

公开(公告)日：2017-01-11

申请号：EP15768922

申请日：2015-03-18

Applicant: SUMITOMO ELECTRIC INDUSTRIES

Inventor： MIYANAGA MIKI ,  WATATANI KENICHI ,  SOGABE KOICHI

IPC: C04B35/00 ,  C04B35/626 ,  C23C14/08 ,  C23C14/34 ,  H01L21/336 ,  H01L21/363 ,  H01L29/786

CPC classification number: C23C14/3414 ,  B28B3/003 ,  C04B35/01 ,  C04B35/6261 ,  C04B35/62675 ,  C04B35/62685 ,  C04B35/64 ,  C04B2235/3217 ,  C04B2235/3232 ,  C04B2235/3239 ,  C04B2235/3241 ,  C04B2235/3244 ,  C04B2235/3251 ,  C04B2235/3256 ,  C04B2235/3258 ,  C04B2235/326 ,  C04B2235/3284 ,  C04B2235/3286 ,  C04B2235/3298 ,  C04B2235/3418 ,  C04B2235/3427 ,  C04B2235/5436 ,  C04B2235/5445 ,  C04B2235/602 ,  C04B2235/6567 ,  C04B2235/6583 ,  C04B2235/661 ,  C04B2235/72 ,  C04B2235/76 ,  C04B2235/77 ,  C04B2235/80 ,  C23C14/08 ,  C23C14/35 ,  H01L21/02554 ,  H01L21/02565 ,  H01L21/02631 ,  H01L29/22 ,  H01L29/78609 ,  H01L29/78681 ,  H01L29/7869

Abstract: There is provided an oxide sintered body including indium, tungsten and zinc, wherein the oxide sintered body includes a bixbite type crystal phase as a main component and has an apparent density of higher than 6.5 g/cm 3 and equal to or lower than 7.1 g/cm 3 , a content rate of tungsten to a total of indium, tungsten and zinc is higher than 1.2 atomic % and lower than 30 atomic %, and a content rate of zinc to the total of indium, tungsten and zinc is higher than 1.2 atomic % and lower than 30 atomic %. There are also provided a sputtering target including this oxide sintered body, and a semiconductor device (10) including an oxide semiconductor film (14) formed by a sputtering method by using the sputtering target.

公开(公告)号：EP3061735A4

公开(公告)日：2016-12-14

申请号：EP15851758

申请日：2015-04-08

Applicant: SUMITOMO ELECTRIC INDUSTRIES

Inventor： MIYANAGA MIKI ,  WATATANI KENICHI ,  SOGABE KOICHI ,  AWATA HIDEAKI ,  KURISU KENICHI

IPC: C04B35/00 ,  C23C14/34 ,  H01L21/363 ,  H01L29/786

CPC classification number: C23C14/3414 ,  C04B35/00 ,  C04B35/495 ,  C04B35/62218 ,  C04B2235/326 ,  C04B2235/3284 ,  C04B2235/3286 ,  C04B2235/3293 ,  C23C14/083 ,  C23C14/086 ,  C23C14/34 ,  H01J37/3429 ,  H01L21/02565 ,  H01L21/02631 ,  H01L29/66969 ,  H01L29/786 ,  H01L29/7869

Abstract: There is provided an oxide sintered body including indium, tungsten, and at least one of zinc and tin, wherein the oxide sintered body includes, as a crystal phase, a complex oxide crystal phase including tungsten and at least one of zinc and tin. There is also provided a semiconductor device (10) including an oxide semiconductor film (14) formed by a sputtering method by using the oxide sintered body as a target.

Abstract translation: 提供了包括铟，钨和锌和锡中的至少一种的氧化物烧结体，其中氧化物烧结体包括作为结晶相的复合氧化物结晶相，其包含钨和至少一种锌和锡。 还提供了一种半导体器件（10），其包括通过使用氧化物烧结体作为靶的通过溅射法形成的氧化物半导体膜（14）。

公开(公告)号：EP2105239A4

公开(公告)日：2014-09-10

申请号：EP07832794

申请日：2007-11-29

Applicant: SUMITOMO ELECTRIC INDUSTRIES ,  SUMITOMO ELEC HARDMETAL CORP

Inventor： WATATANI KENICHI ,  FUSE KEIJI ,  KOBAYASHI YUTAKA

IPC: B23K26/08 ,  B23K26/00 ,  B23K26/06 ,  B23K26/38 ,  B23K26/40 ,  B28D5/00 ,  G02B26/10

CPC classification number: G02B26/101 ,  B23K26/0648 ,  B23K26/0665 ,  B23K26/0821 ,  B23K26/38 ,  B23K26/40 ,  B23K2203/50 ,  B28D5/00