Abstract:
Methods of testing a semiconductor, and semiconductor testing apparatus, are described. In an example, a method for testing a semiconductor can include applying light on the semiconductor to induce photonic degradation. The method can also include receiving a photoluminescence measurement induced from the applied light from the semiconductor and monitoring the photonic degradation of the semiconductor from the photoluminescence measurement.
Abstract:
Solar cells having emitter regions composed of wide bandgap semiconductor material are described. In an example, a method includes forming, in a process tool having a controlled atmosphere, a thin dielectric layer on a surface of a semiconductor substrate of the solar cell. The semiconductor substrate has a bandgap. Without removing the semiconductor substrate from the controlled atmosphere of the process tool, a semiconductor layer is formed on the thin dielectric layer. The semiconductor layer has a bandgap at least approximately 0.2 electron Volts (eV) above the bandgap of the semiconductor substrate.
Abstract:
A solar cell (100A) module includes solar cells (101) that are encased in a protective package and a high electric susceptibility layer (220) that is placed on the solar cells (101). The high electric susceptibility layer (220) is polarized such that a sheet charge is developed at the interface of the high electric susceptibility layer (220) and the solar cells (101). The protective package includes an encapsulant (223) that encapsulates the solar cells (101). The encapsulant (223) may be a multilayer encapsulant, with the high electric susceptibility layer (220) being a layer of the encapsulant (223). The high electric susceptibility layer (220) may also be a material that is separate from the encapsulant (223).
Abstract:
Sputter tools are described. In one embodiment, an apparatus to support a wafer includes a pallet having a depression to receive the wafer. The pallet includes an opening below the depression, and an edge in the depression is to support the wafer over the opening. A cover at least partially covers the opening. In one example, the cover may be a plate with one or more holes, and a pipe may be located below each of the holes in the cover. In one embodiment, a wafer-processing system includes a processing chamber and a pallet with a depression to receive a wafer. The pallet has an opening below the depression, and an edge in the depression supports the wafer over the opening. In one such embodiment, a cover at least partially covers the opening. According to one embodiment, an energy-absorbing material is disposed below the opening in the pallet.
Abstract:
A solar cell (100A) module includes solar cells (101) that are encased in a protective package and a high electric susceptibility layer (220) that is placed on the solar cells (101). The high electric susceptibility layer (220) is polarized such that a sheet charge is developed at the interface of the high electric susceptibility layer (220) and the solar cells (101). The protective package includes an encapsulant (223) that encapsulates the solar cells (101). The encapsulant (223) may be a multilayer encapsulant, with the high electric susceptibility layer (220) being a layer of the encapsulant (223). The high electric susceptibility layer (220) may also be a material that is separate from the encapsulant (223).
Abstract:
Solar cells having emitter regions composed of wide bandgap semiconductor material are described. In an example, a method includes forming, in a process tool having a controlled atmosphere, a thin dielectric layer on a surface of a semiconductor substrate of the solar cell. The semiconductor substrate has a bandgap. Without removing the semiconductor substrate from the controlled atmosphere of the process tool, a semiconductor layer is formed on the thin dielectric layer. The semiconductor layer has a bandgap at least approximately 0.2 electron Volts (eV) above the bandgap of the semiconductor substrate.