公开(公告)号：US20140161966A1

公开(公告)日：2014-06-12

申请号：US14010769

申请日：2013-08-27

Applicant: SAMSUNG DISPLAY CO., LTD.

Inventor： Yong-Suk Lee ,  Myung-Soo Huh ,  Suk-Won Jung ,  Jeong-Ho Yi ,  Mi-Ra An

IPC: C23C16/52

CPC classification number: C23C14/543 ,  B05D1/60 ,  C23C14/12 ,  C23C14/246 ,  C23C14/544 ,  C23C16/4481

Abstract: A monomer vaporizing device and a method of controlling the same are disclosed. The monomer vaporizing device includes: a first vaporizer and a second vaporizer that receive a purge gas and vaporize a first monomer and a second monomer, respectively; a first flow pipe and a second flow pipe that are connected to the respective vaporizers and allow the first monomer and the second monomer, vaporized by the respective vaporizers, to flow therethrough; a transition tube that is connected to the first flow pipe and the second flow pipe and supplies at least one of the first monomer and the second monomer to a deposition chamber; and a control valve apparatus that regulates monomer flow into the deposition chamber. The device facilitates smooth and uninterrupted application of monomer to the interior of a deposition chamber.

Abstract translation: 公开了一种单体蒸发装置及其控制方法。 单体蒸发装置包括：第一蒸发器和第二蒸发器，其分别接收吹扫气体并蒸发第一单体和第二单体; 第一流管和第二流管，其连接到相应的蒸发器并允许由各蒸发器蒸发的第一单体和第二单体流过其中; 过渡管，其连接到所述第一流管和所述第二流管，并且将至少一个所述第一单体和所述第二单体供应到沉积室; 以及调节单体流入沉积室的控制阀装置。 该装置有助于将单体平滑且不间断地应用于沉积室的内部。

公开(公告)号：US20240240320A1

公开(公告)日：2024-07-18

申请号：US18544315

申请日：2023-12-18

Applicant: Samsung Display Co., Ltd.

Inventor： Yong-Suk Lee ,  Suk-Won Jung ,  Myung-Soo Huh ,  Mi-Ra An

IPC: C23C16/46 ,  C23C16/34 ,  C23C16/40 ,  C23C16/458 ,  C23C16/505 ,  C23C16/509 ,  C23C16/52 ,  H01J37/32 ,  H10K50/844 ,  H01L21/67

CPC classification number: C23C16/46 ,  C23C16/345 ,  C23C16/401 ,  C23C16/4586 ,  C23C16/505 ,  C23C16/509 ,  C23C16/52 ,  H01J37/32082 ,  H01J37/32091 ,  H01J37/32165 ,  H01J37/3244 ,  H01J37/32568 ,  H01J37/32724 ,  H10K50/844 ,  H01J2237/3321 ,  H01L21/67109 ,  H01L21/67248

Abstract: A plasma processing apparatus including: a chamber configured to provide a space for processing a substrate; a substrate stage configured to support the substrate within the chamber and including a first electrode, the first electrode configured to receive a first radio frequency signal; a second electrode disposed on an upper portion of the chamber to face the first electrode, the second electrode configured to receive a second radio frequency signal; a gas supply unit configured to supply a process gas onto the substrate within the chamber; and a thermal control unit configured to circulate a heat transfer medium through a first fluid passage provided in the first electrode and a second fluid passage provided in the second electrode to maintain the first and second electrodes at the same temperature.

公开(公告)号：US10266941B2

公开(公告)日：2019-04-23

申请号：US15261629

申请日：2016-09-09

Applicant: Samsung Display Co., Ltd.

Inventor： Yong-Suk Lee ,  Myung-Soo Huh ,  Suk-Won Jung ,  Jeong-Ho Yi ,  Mi-Ra An

IPC: C23C16/00 ,  C23C14/54 ,  C23C14/24 ,  C23C16/448 ,  C23C14/12 ,  B05D1/00

Abstract: A monomer vaporizing device and a method of controlling the same are disclosed. The monomer vaporizing device includes: a first vaporizer and a second vaporizer that receive a purge gas and vaporize a first monomer and a second monomer, respectively; a first flow pipe and a second flow pipe that are connected to the respective vaporizers and allow the first monomer and the second monomer, vaporized by the respective vaporizers, to flow therethrough; a transition tube that is connected to the first flow pipe and the second flow pipe and supplies at least one of the first monomer and the second monomer to a deposition chamber; and a control valve apparatus that regulates monomer flow into the deposition chamber. The device facilitates smooth and uninterrupted application of monomer to the interior of a deposition chamber.

公开(公告)号：US10202683B2

公开(公告)日：2019-02-12

申请号：US14296826

申请日：2014-06-05

Applicant: SAMSUNG DISPLAY CO., LTD.

Inventor： Yong-Suk Lee ,  Min-Sung Seo ,  Myung-Soo Huh ,  Mi-Ra An

IPC: C23C14/56 ,  C23C16/54 ,  H01L21/67 ,  H01L51/52

Abstract: A thin film encapsulation layer manufacturing apparatus is provided that may include a transfer chamber, a sputtering chamber, a monomer deposition chamber, a chemical vapor deposition (CVD) chamber, and an atomic layer deposition (ALD) chamber. The transfer chamber may be connected to each of the other chambers, and may be configured to align a substrate. Each of the other chambers may be configured to receive from and transfer to the transfer chamber a substrate. The sputtering chamber may be configured to form a first inorganic layer on the substrate by a sputtering process. The monomer deposition chamber may be configured to deposit a first organic layer on the first inorganic layer. The CVD chamber may be configured to form a second inorganic layer on the first organic layer. The ALD chamber may be configured to form a third inorganic layer on the second inorganic layer.

公开(公告)号：US20170016109A1

公开(公告)日：2017-01-19

申请号：US15277977

申请日：2016-09-27

Applicant: SAMSUNG DISPLAY CO., LTD.

Inventor： Yong-Suk Lee ,  Myung-Soo Huh ,  Cheol-Rae Jo ,  Sang-Hyuk Hong ,  Jeong-Ho Yi ,  Suk-Won Jung ,  Sun-Ho Kim ,  Mi-Ra An

IPC: C23C14/12 ,  C23C14/58 ,  C23C14/24 ,  C23C14/22

CPC classification number: C23C14/12 ,  C23C14/228 ,  C23C14/246 ,  C23C14/58 ,  C23C14/584

Abstract: A thin film depositing apparatus and a thin film deposition method using the apparatus. The thin film depositing apparatus includes a chamber configured to have a substrate mounted therein, an ejection unit configured to move in the chamber and to eject a deposition vapor to the substrate, and a source supply unit configured to supply a source of the deposition vapor to the ejection unit.

Abstract translation: 一种薄膜沉积设备和使用该设备的薄膜沉积方法。 该薄膜沉积设备包括：一个被配置为具有安装在其中的基板的腔室;喷射单元，被配置为在腔室中移动并将沉积蒸气喷射到基底;以及源供应单元，其构造成将沉积蒸气源供应到 喷射单元。

公开(公告)号：US20150110974A1

公开(公告)日：2015-04-23

申请号：US14445951

申请日：2014-07-29

Applicant: Samsung Display Co., Ltd.

Inventor： Yong-Suk LEE ,  Suk-Won Jung ,  Myung-Soo Huh ,  Mi-Ra An

IPC: C23C16/46 ,  C23C16/455 ,  C23C16/34 ,  C23C16/52 ,  C23C16/509 ,  C23C16/40

CPC classification number: C23C16/46 ,  C23C16/345 ,  C23C16/401 ,  C23C16/4586 ,  C23C16/509 ,  C23C16/52 ,  H01J37/32091 ,  H01J37/32165 ,  H01L21/67109 ,  H01L21/67248

Abstract: A plasma processing apparatus including: a chamber configured to provide a space for processing a substrate; a substrate stage configured to support the substrate within the chamber and including a first electrode, the first electrode configured to receive a first radio frequency signal; a second electrode disposed on an upper portion of the chamber to face the first electrode, the second electrode configured to receive a second radio frequency signal; a gas supply unit configured to supply a process gas onto the substrate within the chamber; and a thermal control unit configured to circulate a heat transfer medium through a first fluid passage provided in the first electrode and a second fluid passage provided in the second electrode to maintain the first and second electrodes at the same temperature.

Abstract translation: 一种等离子体处理装置，包括：室，被配置为提供用于处理基板的空间; 衬底台，被配置为在所述腔室内支撑所述衬底并且包括第一电极，所述第一电极被配置为接收第一射频信号; 第二电极，设置在所述室的上部以面对所述第一电极，所述第二电极被配置为接收第二射频信号; 气体供给单元，其构造成将处理气体供给到所述室内的所述基板上; 以及热控制单元，其被配置为使传热介质循环通过设置在第一电极中的第一流体通道和设置在第二电极中的第二流体通道，以将第一和第二电极保持在相同的温度。