公开(公告)号：EP4020242A1

公开(公告)日：2022-06-29

申请号：EP20858686.7

申请日：2020-06-02

Applicant: Samsung Electronics Co., Ltd.

Inventor： BAE, Jinwoo ,  CHOI, Hyunjoo

IPC: G06F13/16 ,  G06F7/76 ,  G06F12/02

Abstract: The disclosure relates to a 5 th Generation (5G) or pre-5G communication system for supporting a higher data rate than a 4 th Generation (4G) communication system such as Long Term Evolution (LTE). According to various embodiments of the disclosure, an apparatus of a base station in a wireless communication system is provided. The apparatus includes: a master Field Programmable Gate Array (FPGA); a plurality of slave FPGAs controlled by the master FPGA; and an address masker coupled to the master FPGA and the plurality of slave FPGAs, wherein the address masker is configured to: receive different address bits assigned respectively to the plurality of slave FPGAs by the master FPGA; for the different address bits, mask bit values at a specific position with the same value; and transmit masked address bits corresponding respectively to the plurality of slave FPGAs.

公开(公告)号：EP3772103A1

公开(公告)日：2021-02-03

申请号：EP20188770.0

申请日：2020-07-30

Applicant: Samsung Electronics Co., Ltd.

Inventor： CHOI, Yoonyoung ,  LEE, Byunghyun ,  KU, Byeongjoo ,  KIM, Seungjin ,  PARK, Sangjae ,  BAE, Jinwoo ,  LEE, Hangeol ,  CHOI, Bowo ,  HONG, Hyunsil

IPC: H01L27/108 ,  H01L49/02

Abstract: The present disclosure provides capacitor forming methods which may include sequentially forming a first mold layer, a first support material layer, and a second mold layer on a substrate, forming a mask pattern on the second mold layer, forming a recess in the second mold layer, the first support material layer, and the first mold layer using the mask pattern as a mask, forming a lower electrode in the recess, removing the mask pattern by a dry cleaning process, reducing a width of an upper portion of the lower electrode, removing the first mold layer, forming a dielectric layer on a surface of the lower electrode, and forming an upper electrode on the dielectric layer.