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    MICROWAVE LEAKAGE-PREVENTING DEVICE FOR A MICROWAVE OVEN
    1.
    发明专利
    MICROWAVE LEAKAGE-PREVENTING DEVICE FOR A MICROWAVE OVEN 未知

    公开(公告)号：MY123817A

    公开(公告)日：2006-06-30

    申请号：MYPI19970674

    申请日：1997-02-21

    Applicant: SAMSUNG ELECTRONICS CO LTD

    Inventor： SEONG-DEOG JANG ,  HAN-JUN SUNG ,  YONG-WOON HAN ,  CHUL KIM

    IPC: F24C7/02 ,  H05B6/64 ,  H05B6/76

    Abstract: A MICROWAVE OVEN DOOR INCLUDES A SHIELDING PANEL, WHICH IS MADE OF A MATERIAL THROUGH WHICH MICROWAVES CANNOT PASS, HAVING A CONTACT SECTION THAT OPPOSES A FRONT PANEL (22) OF THE OVEN WHEN THE DOOR (30) IS CLOSED. A PLURALITY OF SLITS ARRANGED IN THE CONTACT SECTION AND/OR THE FRONT PANEL, OR BOTH, PREVENT MICROWAVES FROM LEAKING OUT THROUGH A GAP FORMED BETWEEN THE FRONT PANEL AND THE CONTACT SECTION. THE SLITS ARE ARRANGED IN AT LEAST ONE ROW SHAPED AS A CLOSED LOOP AND ARE EVENLY SPACED FROM EACH OTHER. THE LENGTH OF EACH SLIT CORRESPONDS TO ABOUT 1/2 OF A WAVELENGTH OF A MICROWAVE, AND THE WIDTH OF EACH SLIT CORRESPONDS TO NO MORE THAN 1/16 OF THE WAVELENGTH OF THE MICROWAVE. THE INTERVAL BETWEEN TWO ADJACENT SLITS CORRESPONDS TO NO MORE THAN 1/16 OF THE WAVELENGTH OF THE COOKING MICROWAVE. (FIG. 10)

    SEMICONDUCTOR DEVICE
    3.
    发明申请
    SEMICONDUCTOR DEVICE 有权
    半导体器件

    公开(公告)号：US20150287711A1

    公开(公告)日：2015-10-08

    申请号：US14562788

    申请日：2014-12-08

    Applicant: Samsung Electronics Co., Ltd.

    Inventor： SEOKHOON KIM ,  BONYOUNG KOO ,  JinBum KIM ,  CHUL KIM ,  KWAN HEUM LEE ,  BYEONGCHAN LEE ,  Sujin JUNG

    IPC: H01L27/02 ,  H01L29/06 ,  H01L27/088 ,  H01L29/78

    CPC classification number: H01L27/0207 ,  H01L21/823431 ,  H01L27/0886 ,  H01L29/0649 ,  H01L29/66545 ,  H01L29/7834 ,  H01L29/7848

    Abstract: Provided is a semiconductor device which includes a substrate including a first region and a second region different from the first region, a first active pattern provided on the substrate in the first region, a second active pattern provided on the substrate in the second region, a first gate structure crossing over the first active pattern and a second gate structure crossing over the second active pattern, first source/drain regions disposed on the first active pattern at opposite sides of the first gate structure, second source/drain regions disposed on the second active pattern at opposite sides of the second gate structure, and auxiliary spacers disposed in the first region to cover a lower portion of each of the first source/drain regions.

    Abstract translation: 提供一种半导体器件，其包括：衬底，其包括第一区域和与第一区域不同的第二区域;设置在第一区域中的衬底上的第一有源图案，设置在第二区域中的衬底上的第二有源图案; 在第一有源图案上交叉的第一栅极结构和与第二有源图案交叉的第二栅极结构，在第一栅极结构的相对侧设置在第一有源图案上的第一源/漏区，设置在第二有源图案上的第二栅极结构的第二栅极结构 在第二栅极结构的相对侧的有源图案以及设置在第一区域中以覆盖每个第一源极/漏极区域的下部的辅助间隔物。

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